公开(公告)号：US09929171B2

公开(公告)日：2018-03-27

申请号：US15241599

申请日：2016-08-19

申请人： TOSHIBA MEMORY CORPORATION

发明人： Kenji Aoyama

IPC分类号： H01L27/11582 ,  H01L27/11568 ,  H01L27/11521 ,  H01L27/11556 ,  G11C16/26 ,  G11C16/08

CPC分类号： H01L27/11582 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11575

摘要： A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; a semiconductor layer provided extending in a first direction above the semiconductor substrate, on the semiconductor substrate; a first insulating layer provided on a side surface of the semiconductor layer; a charge accumulation layer provided on a side surface of the first insulating layer; a block insulating layer provided on a side surface of the charge accumulation layer; and a plurality of conductive layers stacked in the first direction via an insulating layer, in a periphery of the block insulating layer. The block insulating layer includes: a first block insulating layer; and a second block insulating layer that has a permittivity which is higher than that of the first block insulating layer. A lower end of the second block insulating layer is positioned more upwardly than a lower end of the first insulating layer.

公开(公告)号：US10784283B2

公开(公告)日：2020-09-22

申请号：US16702009

申请日：2019-12-03

申请人： TOSHIBA MEMORY CORPORATION

发明人： Kenji Aoyama

IPC分类号： H01L27/11582 ,  H01L27/11575

摘要： A semiconductor memory device includes a stacked body, a semiconductor member, a charge storage member, a first member, and second members. The stacked body includes electrode films arranged to be separated from each other along a first direction. A terrace is formed for each electrode film in an end portion of the stacked body in a second direction. The first member spreads along the first direction and the second direction. The first member is provided inside the cell portion. The second members are provided inside the end portion. The electrode film includes two portions separated from each other in a third direction. The two portions are separated in the third direction by the first member and the plurality of second members. An insulator between the electrode films is formed continuously between two sides of the plurality of second members in the third direction.

公开(公告)号：US10553608B2

公开(公告)日：2020-02-04

申请号：US16128673

申请日：2018-09-12

申请人： TOSHIBA MEMORY CORPORATION

发明人： Kenji Aoyama

IPC分类号： H01L27/11582 ,  H01L27/11575

摘要： A semiconductor memory device includes a stacked body, a semiconductor member, a charge storage member, a first member, and second members. The stacked body includes electrode films arranged to be separated from each other along a first direction. A terrace is formed for each electrode film in an end portion of the stacked body in a second direction. The first member spreads along the first direction and the second direction. The first member is provided inside the cell portion. The second members are provided inside the end portion. The electrode film includes two portions separated from each other in a third direction. The two portions are separated in the third direction by the first member and the plurality of second members. An insulator between the electrode films is formed continuously between two sides of the plurality of second members in the third direction.

公开(公告)号：US10546871B2

公开(公告)日：2020-01-28

申请号：US15262340

申请日：2016-09-12

申请人： Toshiba Memory Corporation

发明人： Kenji Aoyama

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L23/528

摘要： A semiconductor memory device according to an embodiment comprises: a memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate; a stepped part for contacting the plurality of conductive layers to a wiring line; a contact extending in the first direction and being connected to the conductive layer in the stepped part; and a plurality of columnar bodies extending in the first direction and penetrates the conductive layer in the stepped part and including a first columnar body having a first height and a second columnar body having a second height which is lower than the first height.