公开(公告)号：US12020900B2

公开(公告)日：2024-06-25

申请号：US17440613

申请日：2020-03-13

申请人： TOKYO ELECTRON LIMITED

发明人： Munehito Kagaya ,  Satoru Kawakami ,  Tsuyoshi Moriya ,  Tatsuo Matsudo ,  Jun Yamawaku ,  Hiroyuki Onoda

IPC分类号： H01J37/32 ,  H01L21/02

CPC分类号： H01J37/32174 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： There is provided a plasma processing device. The plasma processing device comprises: a processing chamber; a partition plate that has an insulating property, and configured to partition a space in the processing chamber into a reaction chamber in which an object to be processed is mounted and a plasma generating chamber in which plasma is generated, wherein a first electrode is provided on a surface of the partition plate on the side of the plasma generating chamber, and the partition plate has a plurality of through holes formed for supplying active species contained in the plasma generated in the plasma generating chamber to the reaction chamber; a second electrode disposed in the plasma generating chamber so as to face the first electrode; and a power supply configured to supply high-frequency power obtained by phase-controlling and superimposing high-frequency powers of a plurality of frequencies to one of the first electrode and the second electrode when the plasma is generated in the plasma generating chamber.

公开(公告)号：US11443920B2

公开(公告)日：2022-09-13

申请号：US16730861

申请日：2019-12-30

申请人： TOKYO ELECTRON LIMITED

发明人： Jun Yamawaku ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： H01J37/32

摘要： A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite ends and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.

公开(公告)号：US09899191B2

公开(公告)日：2018-02-20

申请号：US14250783

申请日：2014-04-11

申请人： TOKYO ELECTRON LIMITED

发明人： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US20140220260A1

公开(公告)日：2014-08-07

申请号：US14171928

申请日：2014-02-04

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC分类号： C23C16/50

CPC分类号： C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733

摘要： A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.

摘要翻译： 用于在真空室内进行等离子体处理的基板处理装置包括转盘，其包括基板安装部，用于沿着真空室的周向形成的基板，以对其进行轨道旋转; 等离子体产生气体供应部分，其将等离子体产生气体供应到等离子体产生区域中; 向所述等离子体发生气体供给能量以将所述等离子体产生气体变更为等离子体的能量供给部; 偏置电极，设置在转台的下侧以面对等离子体产生区域，并将等离子体中的离子引导到晶片的表面上; 以及将真空室抽出的排气口，其中偏置电极从转台的旋转中心延伸到外缘侧，偏置电极的旋转方向的宽度小于相邻的基板安装部之间的距离。

公开(公告)号：US11935727B2

公开(公告)日：2024-03-19

申请号：US16990166

申请日：2020-08-11

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： H01J37/32 ,  B08B9/28 ,  C09K13/00 ,  C23F4/00 ,  H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32724 ,  B08B9/286 ,  C09K13/00 ,  C23F4/00 ,  H01J37/32385 ,  H01L21/3065

摘要： There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.

公开(公告)号：US11315765B2

公开(公告)日：2022-04-26

申请号：US16368060

申请日：2019-03-28

申请人： TOKYO ELECTRON LIMITED

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： H01J37/32

摘要： Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

公开(公告)号：US10325758B2

公开(公告)日：2019-06-18

申请号：US14933911

申请日：2015-11-05

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： H01J37/32

摘要： A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed.

公开(公告)号：US10283328B2

公开(公告)日：2019-05-07

申请号：US14565612

申请日：2014-12-10

申请人： TOKYO ELECTRON LIMITED

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

摘要： Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

公开(公告)号：US09111747B2

公开(公告)日：2015-08-18

申请号：US13916847

申请日：2013-06-13

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/509 ,  H01L21/687

CPC分类号： H01L21/02104 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/68764 ,  H01L21/68771

摘要： A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

摘要翻译： 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。

公开(公告)号：US20240186122A1

公开(公告)日：2024-06-06

申请号：US18442594

申请日：2024-02-15

申请人： Tokyo Electron Limited

发明人： Jun Yamawaku ,  Chishio Koshimizu

IPC分类号： H01J37/32 ,  B08B9/28 ,  C09K13/00 ,  C23F4/00 ,  H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32724 ,  B08B9/286 ,  C09K13/00 ,  C23F4/00 ,  H01J37/32385 ,  H01L21/3065

摘要： There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.