公开(公告)号：US20180342416A1

公开(公告)日：2018-11-29

申请号：US15991938

申请日：2018-05-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bradley David SUCHER ,  Bernard John FISCHER ,  Abbas ALI

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76237 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/0649

Abstract: An electronic device includes a semiconductor substrate having a plurality of trenches formed therein. Each trench includes a sidewall having a doped region, a sidewall liner, and a filler material. The substrate has a slip density of less than 5 cm−2. The low slip density is achieved by a novel annealing protocol performed after implanting the dopant in the sidewall to repair damage and/or stress caused by the implant process.

公开(公告)号：US20150187597A1

公开(公告)日：2015-07-02

申请号：US14576617

申请日：2014-12-19

Applicant: Texas Instruments Incorporated

Inventor： Bradley David SUCHER ,  Rick L. WISE

IPC: H01L21/324 ,  H01L21/02

CPC classification number: H01L21/3225

Abstract: By controlling the concentration and size of bulk micro defects (BMD) during the manufacture of an integrated circuit slip and associated yield loss due to slip may be eliminated. A process for eliminating slip that is customized to an integrated circuit (IC) manufacturing flow is disclosed. The process is adapted to the oxygen content of the starting material and to the thermal budget of an IC manufacturing flow and generates a sufficient concentration of BMDs of a size that is optimized to getter microcracks thereby eliminating slip. Slip is eliminated in unpatterned wafers and in wafers containing shallow trench isolation and deep trench isolation using a BMD nucleation anneal and a BMD growth anneal.

Abstract translation: 通过控制在集成电路滑移的制造过程中的体积微缺陷（BMD）的浓度和尺寸以及由于滑动引起的相关的成品率损失可以被消除。 公开了一种消除针对集成电路（IC）制造流程定制的滑移的过程。 该方法适用于起始材料的氧含量和IC制造流程的热预算，并且产生足够浓度的BMD，其尺寸被优化以消除微裂纹从而消除滑移。 在未图案化的晶片和含有浅沟槽隔离的晶片和使用BMD成核退火和BMD生长退火的深沟槽隔离的晶片中消除了滑移。