公开(公告)号：US20180342416A1

公开(公告)日：2018-11-29

申请号：US15991938

申请日：2018-05-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Bradley David SUCHER ,  Bernard John FISCHER ,  Abbas ALI

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76237 ,  H01L21/823481 ,  H01L27/088 ,  H01L29/0649

Abstract: An electronic device includes a semiconductor substrate having a plurality of trenches formed therein. Each trench includes a sidewall having a doped region, a sidewall liner, and a filler material. The substrate has a slip density of less than 5 cm−2. The low slip density is achieved by a novel annealing protocol performed after implanting the dopant in the sidewall to repair damage and/or stress caused by the implant process.