公开(公告)号：US11380589B2

公开(公告)日：2022-07-05

申请号：US16662845

申请日：2019-10-24

Applicant: TESSERA, INC.

Inventor： Veeraraghavan S. Basker ,  Kangguo Cheng ,  Ali Khakifirooz

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L21/265 ,  H01L21/762 ,  H01L21/306 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/027 ,  H01L29/78 ,  H01L21/3115 ,  H01L21/3215

Abstract: An array of semiconductor fins is formed on a top surface of a substrate. A dielectric material liner is formed on the surfaces of the array of semiconductor fins. A photoresist layer is applied and patterned such that sidewalls of an opening in the photoresist layer are parallel to the lengthwise direction of the semiconductor fins, and are asymmetrically laterally offset from a lengthwise direction passing through the center of mass of a semiconductor fin to be subsequently removed. An angled ion implantation is performed to convert a top portion of dielectric material liner into a compound material portion. The compound material portion is removed selective to the remaining dielectric material liner, and the physically exposed semiconductor fin can be removed by an etch or converted into a dielectric material portion by a conversion process. The dielectric material liner can be removed after removal of the semiconductor fin.

公开(公告)号：US10607890B2

公开(公告)日：2020-03-31

申请号：US15450829

申请日：2017-03-06

Applicant: TESSERA, INC.

Inventor： Veeraraghavan S. Basker ,  Kangguo Cheng ,  Ali Khakifirooz

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/762 ,  H01L21/306 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/027 ,  H01L29/78 ,  H01L21/3115 ,  H01L21/3215 ,  H01L29/06 ,  H01L29/423 ,  H01L21/265

Abstract: An array of semiconductor fins is formed on a top surface of a substrate. A dielectric material liner is formed on the surfaces of the array of semiconductor fins. A photoresist layer is applied and patterned such that sidewalls of an opening in the photoresist layer are parallel to the lengthwise direction of the semiconductor fins, and are asymmetrically laterally offset from a lengthwise direction passing through the center of mass of a semiconductor fin to be subsequently removed. An angled ion implantation is performed to convert a top portion of dielectric material liner into a compound material portion. The compound material portion is removed selective to the remaining dielectric material liner, and the physically exposed semiconductor fin can be removed by an etch or converted into a dielectric material portion by a conversion process. The dielectric material liner can be removed after removal of the semiconductor fin.