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公开(公告)号：US20240422888A1
公开(公告)日：2024-12-19
申请号：US18634221
申请日：2024-04-12
Inventor： Chien-Hsing Lu , Chih-Chiang Tu , Fei-Gwo Tsai , Chih-Wei Wen , Hsin-Fu Tseng , Tzu Jeng Hsu
Abstract: A laser produced plasma (LPP)-extreme ultraviolet (EUV) light source includes a vacuum chamber, a rotatable crucible disposed in the vacuum chamber with an annular inner surface for carrying a liquid metal, and a laser arranged to apply laser light to the liquid metal carried on the annular inner surface of the rotatable crucible to cause the liquid metal to emit EUV light. The LPP-EUV light source further includes a stationary component disposed in the vacuum chamber and positioned proximate to the annular inner surface of the rotatable crucible or surrounding the rotatable crucible, a coolant fluid delivery inlet or nozzle, and a cooling element secured with the stationary component and including a feature configured to operatively couple with coolant fluid delivered by the coolant fluid delivery inlet or nozzle.
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公开(公告)号：US12153341B2
公开(公告)日：2024-11-26
申请号：US18360830
申请日：2023-07-28
Inventor： Wu-Hung Ko , Chung-Hung Lin , Chih-Wei Wen
Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.
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公开(公告)号：US20140186750A1
公开(公告)日：2014-07-03
申请号：US13731420
申请日：2012-12-31
Inventor： Chien-Hsing Lu , Chung-Hung Lin , Chih-Wei Wen
IPC: G03F1/74
CPC classification number: G03F7/70866 , G03F1/74 , Y10S430/143
Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.
Abstract translation: 一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。 在光束扫描之后，对光刻掩模进行放射线处理。 该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源 面具。 该过程与光刻掩模的表面部分反应以修复光刻掩模。 通过辐射处理，去除光刻掩模上的残留处理气体。
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公开(公告)号：US11809076B2
公开(公告)日：2023-11-07
申请号：US17826267
申请日：2022-05-27
Inventor： Wu-Hung Ko , Chung-Hung Lin , Chih-Wei Wen
CPC classification number: G03F1/82 , B08B7/0035 , B08B7/0071 , G03F7/70033 , G03F7/70733 , G03F7/70925 , H01L21/67028 , H01L21/67225
Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.
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公开(公告)号：US11703752B2
公开(公告)日：2023-07-18
申请号：US17213047
申请日：2021-03-25
Inventor： Wu-Hung Ko , Kun-Lung Hsieh , Chih-Wei Wen
CPC classification number: G03F1/44 , G03F1/32 , G03F1/46 , G03F1/54 , G03F1/62 , G03F1/64 , G03F1/84 , G03F7/70983
Abstract: A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.
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Patent Agency Ranking
公开(公告)号：US11347143B2
公开(公告)日：2022-05-31
申请号：US16943881
申请日：2020-07-30
Inventor： Wu-Hung Ko , Chung-Hung Lin , Chih-Wei Wen
Abstract: A method for cleaning a reflective photomask is provided. The method includes: disposing the reflective photomask in a chamber; providing hydrogen radicals to the chamber; and exposing the reflective photomask to the hydrogen radicals. A method of manufacturing a semiconductor structure and system for forming a semiconductor structure are also provided.
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公开(公告)号：US08999610B2
公开(公告)日：2015-04-07
申请号：US13731420
申请日：2012-12-31
Inventor： Chien-Hsing Lu , Chung-Hung Lin , Chih-Wei Wen
IPC: G03F1/74
CPC classification number: G03F7/70866 , G03F1/74 , Y10S430/143
Abstract: A method includes performing a beam scan on a photolithography mask to repair the photolithography mask. After the beam scan, a radiation treatment is performed on the photolithography mask. The method is performed by an apparatus including a beam generator configured to generate and project a beam on the lithography mask, a radiation source configured to generate a radiation on the lithography mask, and a process gas source configured to release a process gas onto the lithography mask. The process as reacts with a surface portion of the lithography mask to repair the lithography mask. With the radiation treatment, residue process gas on the lithography mask is removed.
Abstract translation: 一种方法包括在光刻掩模上执行光束扫描以修复光刻掩模。 在光束扫描之后，对光刻掩模进行放射线处理。 该方法由包括被配置为在光刻掩模上生成和投影光束的光束发生器的设备执行，被配置为在光刻掩模上产生辐射的辐射源以及被配置为将处理气体释放到光刻上的处理气体源 面具。 该过程与光刻掩模的表面部分反应以修复光刻掩模。 通过辐射处理，去除光刻掩模上的残留处理气体。
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公开(公告)号：US11340524B2
公开(公告)日：2022-05-24
申请号：US16794912
申请日：2020-02-19
Inventor： Tzu Han Liu , Chih-Wei Wen , Chung-Hung Lin
Abstract: The present disclosure provides a photomask, including a front side having a patterned layer, a back side opposite to the front side, a sidewall connecting the front side and the back side, a reflective layer between the front side and the back side, and a polymer layer on the backside of the photomask.
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9.发明授权公开(公告)号：US11088003B2
公开(公告)日：2021-08-10
申请号：US16258824
申请日：2019-01-28
Inventor： Po-Chien Huang , Chung-Hung Lin , Chih-Wei Wen
IPC: H01L21/673 , H01L21/033 , G03F7/20 , G03F1/66 , G03F1/62 , H01T23/00
Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a first chamber for accommodating a mask, and a first ionizer in the first chamber, wherein the first ionizer is adjacent to the mask.
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公开(公告)号：US10983430B2
公开(公告)日：2021-04-20
申请号：US15902903
申请日：2018-02-22
Inventor： Wu-Hung Ko , Chih-Wei Wen , Kun-Lung Hsieh
Abstract: A method of testing a photomask assembly is disclosed. The method includes placing a photomask assembly into a chamber. The photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source in the chamber. The exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time.
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