公开(公告)号：US20150221504A1

公开(公告)日：2015-08-06

申请号：US14685267

申请日：2015-04-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Gin-Chen Huang ,  Tsai-Fu Hsiao ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Hongfa Luan ,  Sey-Ping Sung ,  Clement Hsingjen Wann

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L21/324

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/324 ,  H01L29/66795

摘要： Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed.

摘要翻译： 公开了形成绝缘材料层的半导体器件制造方法和方法。 在一个实施例中，形成半导体器件的复合绝缘材料层的方法包括提供工件并使用第一等离子体功率电平在工件上形成绝缘材料层的第一子层。 使用第二等离子体功率电平在绝缘材料层的第一子层上形成绝缘材料层的第二子层，并且将工件退火。

公开(公告)号：US12014922B2

公开(公告)日：2024-06-18

申请号：US17592091

申请日：2022-02-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tsai-Fu Hsiao ,  Kuang-Yuan Hsu ,  Pei-Ren Jeng ,  Tze-Liang Lee

IPC分类号： C23C16/455 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/0228 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45593 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67754 ,  H01L21/6776 ,  H01L21/68764 ,  H01L21/68771 ,  C23C16/45561

摘要： An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

公开(公告)号：US09607826B2

公开(公告)日：2017-03-28

申请号：US14685267

申请日：2015-04-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Gin-Chen Huang ,  Tsai-Fu Hsiao ,  Ching-Hong Jiang ,  Neng-Kuo Chen ,  Hongfa Luan ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L21/324

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/324 ,  H01L29/66795

摘要： Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed.