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    SPAD image sensor and associated fabricating method
    5.
    发明授权
    SPAD image sensor and associated fabricating method 有权

    公开(公告)号：US11264525B2

    公开(公告)日：2022-03-01

    申请号：US16880323

    申请日：2020-05-21

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Tzu-Jui Wang ,  Jhy-Jyi Sze ,  Yuichiro Yamashita ,  Kuo-Chin Huang

    IPC: H01L31/107 ,  H01L27/146 ,  H01L31/02

    Abstract: A single photon avalanche diode (SPAT) image sensor is disclosed. The SPAT) image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.

    IMAGE SENSOR HAVING A LATERAL PHOTODETECTOR STRUCTURE
    9.
    发明公开
    IMAGE SENSOR HAVING A LATERAL PHOTODETECTOR STRUCTURE 审中-公开

    公开(公告)号：US20240014244A1

    公开(公告)日：2024-01-11

    申请号：US17857382

    申请日：2022-07-05

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Kuo-Chin Huang ,  Tzu-Jui Wang

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14685

    Abstract: The present disclosure relates to an image sensor including a first semiconductor layer having a first doping type. A second semiconductor layer having the first doping type is between sidewalls of the first semiconductor layer and extends vertically along the sidewalls of the first semiconductor layer from a bottom side of the first semiconductor layer toward a top side of the first semiconductor layer. A first doped region having the first doping type is in the first semiconductor layer and laterally beside the second semiconductor layer. The first doped region extends vertically along a sidewall of the second semiconductor layer. A second doped region having a second doping type is in the first semiconductor layer and laterally beside the first doped region. The second doped region extends vertically along a side of the first doped region and forms a p-n junction with the first doped region.

    SPAD image sensor and associated fabricating method
    10.
    发明授权
    SPAD image sensor and associated fabricating method 审中-公开

    公开(公告)号：US10672934B2

    公开(公告)日：2020-06-02

    申请号：US15873289

    申请日：2018-01-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Tzu-Jui Wang ,  Jhy-Jyi Sze ,  Yuichiro Yamashita ,  Kuo-Chin Huang

    IPC: H01L31/107 ,  H01L27/144 ,  H01L31/16 ,  H01L27/146 ,  H01L31/02

    Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.

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