公开(公告)号：US12068394B2

公开(公告)日：2024-08-20

申请号：US17306120

申请日：2021-05-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chia-Wei Chang ,  Chiung Wen Hsu ,  Yu-Ting Weng

IPC分类号： H01L29/78 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3085 ,  H01L21/31116 ,  H01L21/76232 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7853

摘要： A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

公开(公告)号：US20240055526A1

公开(公告)日：2024-02-15

申请号：US17886433

申请日：2022-08-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Chi LIN ,  Yu-Ting WENG ,  Chiung Wen Hsu ,  Chao-Cheng Chen

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/311

CPC分类号： H01L29/7851 ,  H01L29/66795 ,  H01L29/0649 ,  H01L21/823431 ,  H01L21/31116

摘要： A semiconductor device and a method of fabricating a semiconductor device are provided herein. The semiconductor device includes a substrate; a fin structure arranged on the substrate and including a ridge portion and a bottom portion between the ridge portion and the substrate, wherein the ridge portion comprises a channel region and a fin region between the channel region and the bottom portion, a critical dimension of the bottom portion in a cross-fin direction is gradually increased toward the substrate to twice or more of a critical dimension of the channel region in the cross-fin direction; a metal gate structure disposed on the fin structure extending the cross-fin direction; and an epitaxy region disposed beside the metal gate structure in a lengthwise direction of the fin structure and connected to the fin structure.