公开(公告)号：US12041860B2

公开(公告)日：2024-07-16

申请号：US17581153

申请日：2022-01-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yu-Der Chih ,  Wen-Zhang Lin ,  Yun-Sheng Chen ,  Jonathan Tsung-Yung Chang ,  Chrong-Jung Lin ,  Ya-Chin King ,  Cheng-Jun Lin ,  Wang-Yi Lee

IPC: H10N70/00 ,  H10B63/00

CPC classification number: H10N70/021 ,  H10B63/80 ,  H10N70/063 ,  H10N70/066 ,  H10N70/068 ,  H10N70/841

Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.