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    RESIST DISPENSING SYSTEM AND METHOD OF USE
    5.
    发明公开
    RESIST DISPENSING SYSTEM AND METHOD OF USE 审中-公开

    公开(公告)号：US20230367218A1

    公开(公告)日：2023-11-16

    申请号：US18223936

    申请日：2023-07-19

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD

    发明人： Ya-Ching CHANG ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

    IPC分类号： G03F7/16 ,  H01L21/67

    CPC分类号： G03F7/16 ,  H01L21/67017 ,  H01L21/6715 ,  B05D1/005

    摘要： In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.

    ELECTROSTATIC DISCHARGE PREVENTION PUMP
    6.
    发明申请
    ELECTROSTATIC DISCHARGE PREVENTION PUMP 有权

    公开(公告)号：US20230050816A1

    公开(公告)日：2023-02-16

    申请号：US17401244

    申请日：2021-08-12

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Tzu-Yang LIN ,  Yu-Cheng CHANG ,  Cheng-Han WU ,  Shang-Sheng LI ,  Chen-Yu LIU ,  Chen Yi HSU

    IPC分类号： H05F3/02 ,  G03F7/16

    摘要： A dispensing system includes a dispense material supply that contains a dispense material and a dispensing pump connected downstream from the dispense material supply. The dispensing pump includes a body made of a first electrically conductive material, one or more first electrical contacts that are disposed on the body of the dispensing pump, and one or more first connection wires that are coupled between each one of the one or more first electrical contacts and ground. The dispensing system also includes a dispensing nozzle connected downstream from the dispensing pump and includes a tube made of a second electrically conductive material, one or more second electrical contacts that are disposed on an outer surface of the tube, and one or more second connection wires that are coupled between each one of the one or more second electrical contacts and the ground.

    METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
    8.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR STRUCTURE 有权

    公开(公告)号：US20210286269A1

    公开(公告)日：2021-09-16

    申请号：US17320754

    申请日：2021-05-14

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Ming-Hui WENG ,  An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN ,  Chen-Yu LIU

    IPC分类号： G03F7/30 ,  H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115 ,  G03F7/32 ,  G03F7/40

    摘要： A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C6-C7 cyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.