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公开(公告)号：US20140145249A1
公开(公告)日：2014-05-29
申请号：US13689327
申请日：2012-11-29
发明人： Tsung-Che Tsai , Yi-Feng Chang , Jam-Wem Lee
CPC分类号： H01L29/7851 , H01L29/4238 , H01L29/66795 , H01L29/7391 , H01L29/785
摘要： An embodiment integrated circuit (e.g., diode) and method of making the same. The embodiment integrated circuit includes a well having a first doping type formed over a substrate having the first doping type, the well including a fin, a source formed over the well on a first side of the fin, the source having a second doping type, a drain formed over the well on a second side of the fin, the drain having the first doping type, and a gate oxide formed over the fin, the gate oxide laterally spaced apart from the source by a back off region of the fin. The integrated circuit is compatible with a FinFET fabrication process.
摘要翻译： 实施例集成电路（例如，二极管）及其制造方法。 实施例集成电路包括具有形成在具有第一掺杂类型的衬底上的第一掺杂类型的阱，所述阱包括鳍状物，源极在鳍的第一侧上形成在阱上，源具有第二掺杂型， 在鳍的第二侧上的阱上形成的漏极，具有第一掺杂类型的漏极和形成在鳍上的栅极氧化物，栅极氧化物通过鳍片的退避区域与源极横向间隔开。 该集成电路与FinFET制造工艺兼容。
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公开(公告)号：US20140131765A1
公开(公告)日：2014-05-15
申请号：US13678347
申请日：2012-11-15
发明人： Tsung-Che Tsai , Yi-Feng Chang , Jam-Wem Lee
CPC分类号： H01L29/66363 , H01L27/0255 , H01L27/0262 , H01L27/0886 , H01L29/73 , H01L29/7391 , H01L29/7436
摘要： A device includes a semiconductor substrate, and an insulation region extending from a top surface of the semiconductor substrate into the semiconductor substrate. The device further includes a first node and a second node, and an Electro-Static Discharge (ESD) device coupled between the first node and the second node. The ESD device includes a semiconductor fin adjacent to and over a top surface of the insulation region. The ESD device is configured to, in response to an ESD transient on the first node, conduct a current from the first node to the second node.
摘要翻译： 一种器件包括半导体衬底和从半导体衬底的顶表面延伸到半导体衬底中的绝缘区域。 该设备还包括第一节点和第二节点以及耦合在第一节点和第二节点之间的静电放电（ESD）设备。 ESD器件包括邻近绝缘区域的顶表面并且超过绝缘区域的顶表面的半导体鳍片。 ESD装置被配置为响应于第一节点上的ESD瞬变，将电流从第一节点传导到第二节点。
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