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    INTERCONNECT STRUCTURE AND FORMING METHOD THEREOF
    1.
    发明申请
    INTERCONNECT STRUCTURE AND FORMING METHOD THEREOF 有权

    公开(公告)号：US20220216165A1

    公开(公告)日：2022-07-07

    申请号：US17706039

    申请日：2022-03-28

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jian-Hong LIN ,  Kuo-Yen LIU ,  Hsin-Chun CHANG ,  Tzu-Li LEE ,  Yu-Ching LEE ,  Yih-Ching WANG

    IPC: H01L23/00 ,  H01L23/58 ,  H01L27/02 ,  H01L23/522

    Abstract: An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.

    OVERLAY-SHIFT MEASUREMENT SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND MEASURING ALIGNMENT MARK OF SEMICONDUCTOR STRUCTURE
    2.
    发明申请
    OVERLAY-SHIFT MEASUREMENT SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND MEASURING ALIGNMENT MARK OF SEMICONDUCTOR STRUCTURE 审中-公开

    公开(公告)号：US20190148123A1

    公开(公告)日：2019-05-16

    申请号：US16100365

    申请日：2018-08-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yu-Ching LEE ,  Yu-Piao FANG

    IPC: H01L21/027 ,  H01L23/544

    Abstract: Methods for manufacturing a semiconductor structure are provided. A substrate is provided. A first lithography is performed according to a first layer mask, to form a plurality of first photonic crystals with a first pitch on a first area of a layer above the substrate. A second lithography is performed according to a second layer mask, to form a plurality of second photonic crystals with a second pitch on a second area of the layer. A light is provided to illuminate the first and second photonic crystals. Light reflected by the first and second photonic crystals or transmitted through the first and second photonic crystals is received. The received light is analyzed to detect overlay-shift between the first photonic crystals corresponding to the first layer mask and the second photonic crystals corresponding to the second layer mask.

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