摘要:
A testing holder for a chip unit, a multi site holding frame for plural chip units and a method for testing a die thereof are provided. The proposed multi site holding frame for testing plural chip units simultaneously includes a first holder frame having a plurality of testing holders. Each of the plurality of testing holders includes a holder body containing a specific one of the plural chip units, and a pressure releasing device formed on the holder body to release an insertion pressure when the specific one of the plural chip units is inserted in the holder body.
摘要:
A testing module for a semiconductor wafer-form package includes a circuit board structure, first connectors, a first connecting structure, second connectors, third connectors and a first bridge connector. The circuit board structure includes two edge regions and a main region located therebetween. The first connectors are located over the edge regions and connected to the circuit board structure. The first connecting structure is located over and distant from the circuit board structure. The second connectors and third connectors are located over and connected to the first connecting structure, where the third connectors are configured to transmit electric signals for testing the semiconductor wafer-form package being placed over the main region. The first bridge connector is electrically coupling the circuit board structure and the first connecting structure by connecting the second connectors and the first connectors.
摘要:
A device for testing a bottom package of an integrated fan-out (InFO) Package-on-Package (PoP) comprises a bottom fixture having a space to accommodate the bottom package during testing and a detachable top cover, configured for conducting at least one test of the bottom package, wherein one or both of the bottom fixture and the top cover have a plurality of probing contacts for testing of the bottom package and wherein the device can be opened for placement of the bottom package under testing, and the cover is attachable to the bottom fixture for conducting the testing.
摘要:
A system for testing a device under test (DUT) includes a probe card and a test module. The probe card includes probe beds electrically coupled to a circuit board and a first plurality of electrical contacts coupled to the circuit board, which are for engaging respective ones of a plurality of electrical contacts of a test equipment module. Probes are coupled to respective probe beds and are disposed to engage electrical contacts of the DUT. The probe card includes a second plurality of electrical contacts coupled to the circuit board. The first and second pluralities of contacts are mutually exclusive. The test module includes a memory, a processor, and a plurality of electrical contacts electrically coupled to respective ones of the second plurality of electrical contacts of the probe card. The circuit board includes a first electrical path for electrically coupling the test equipment module to the test module.
摘要:
The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.
摘要:
A circuit that includes a stacked circuit layer, a plurality of test contact points and a comparator is disclosed. The stacked circuit layer includes a plurality of reference capacitors each having a reference capacitance. Each of the test contact points is electrically connecting to an under-test capacitor of an under-test module. The comparator compares the reference capacitance of one of the reference capacitors with an under-test capacitance of the under-test capacitor corresponding to one of the test contact points to measure a range of the under-test capacitance.
摘要:
A method is disclosed that includes the operations outlined below. For a plurality of dies on a test fixture, an antenna distance between each of first antennas of one of the dies and every one of first antennas of the other dies is determined. The dies are categorized into die groups, wherein the antenna distance between each of the first antennas of one of the dies in one of the die groups and every one of the first antennas of the other dies in the same one of the die groups is larger than an interference threshold. Test processes are sequentially performed on the die groups. Each of the test processes is performed according to signal transmissions between the first antennas and second antennas of the under-test device each positionally corresponds to one of the first antennas.
摘要:
A circuit is disclosed that includes a signal-forcing path, a discharging path, a contact probe, a monitoring probe and a switch module. The signal-forcing path is connected to a signal source. The discharging path is connected to a discharging voltage terminal. The contact probe contacts a pad module of an under-test device. The monitoring probe generates a monitored voltage associated with the pad module. The switch module is operated in a discharging mode to connect the contact probe to the discharging path when the monitored voltage does not reach a threshold voltage such that the under-test device is discharged and is operated in an operation mode to connect the contact probe to the signal-forcing path when the monitored voltage reaches the threshold voltage such that a signal generated by the signal source is forced to the under-test device.
摘要:
A circuit includes a stacked circuit layer, a plurality of test contact points, and a comparator. The stacked circuit layer includes a plurality of reference capacitors each having a reference capacitance. Each of the test contact points is electrically connecting to an under-test capacitor of an under-test module. The comparator compares the reference capacitance of one of the reference capacitors with an under-test capacitance of the under-test capacitor corresponding to one of the test contact points to measure a range of the under-test capacitance.
摘要:
A test structure is provided for testing a semiconductor structure having a plurality of tiers. The test structure includes at least one conductive loop. Each respective conductive loop has ends defining at least one opening between the ends, and is embedded inside one or more of the plurality of tiers in the semiconductor structure. The test structure also includes at least two test pads on each respective conductive loop. The at least two test pads are connected with respective ends of each respective conductive loop. The test structure is configured to permit detection of defects within each of the plurality of tiers in the semiconductor structure if the defects exist, using a testing apparatus.