公开(公告)号：US11624985B2

公开(公告)日：2023-04-11

申请号：US17063386

申请日：2020-10-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ta-Ching Yu ,  Shih-Che Wang ,  Shu-Hao Chang ,  Yi-Hao Chen ,  Chen-Yen Kao ,  Te-Chih Huang ,  Yuan-Fu Hsu

IPC: H01L21/66 ,  G03F7/20 ,  G01N21/956 ,  H01L21/027 ,  G01N21/89 ,  G06T7/00 ,  G01N21/88

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

公开(公告)号：US10795270B2

公开(公告)日：2020-10-06

申请号：US15833640

申请日：2017-12-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Ching Yu ,  Shih-Che Wang ,  Shu-Hao Chang ,  Yi-Hao Chen ,  Chen-Yen Kao ,  Te-Chih Huang ,  Yuan-Fu Hsu

IPC: H01L21/311 ,  G03F7/20 ,  G01N21/956 ,  H01L21/027 ,  G01N21/89 ,  G06T7/00 ,  H01L21/66 ,  G01N21/88

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.