Abstract:
A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing an n-GaN layer on the plurality of GaN rods.
Abstract:
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Abstract:
A light emitting device using a micro-rod and a method of manufacturing a light emitting device are provided, the method includes forming a material layer on a substrate. The material layer is patterned such that a hole is formed that exposes a surface of the substrate. A core is grown in the shape of a micro-rod on the surface of the substrate exposed through the hole. A light emitting layer is deposited on the core. A shell is grown on the light emitting layer.
Abstract:
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Abstract:
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Abstract:
A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing an n-GaN layer on the plurality of GaN rods.
Abstract:
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Abstract:
A content recommending method and apparatus therefor. The content recommending method involves obtaining location information by tracing movement of a user; analyzing a preference of the user by using the location information; and selecting content to be provided to the user according to the preference.
Abstract:
A method and apparatus for providing information, and a computer readable storage medium having recorded thereon a program for executing the method, are provided. The method includes receiving information from at least one device included in a location-based group; transmitting information of the location-based group based on the received information to an external device; receiving at least one piece of targeting information regarding the location-based group based on the information of the location-based group from the external device; and outputting the received at least one piece of targeting information.
Abstract:
A method and apparatus for reproducing network content are provided. An apparatus for reproducing network content includes a first content list queue storing a content list received from content providing servers; a content list queue management module changing a content list stored in the first content list queue according to a user's command to change the content list; a second content list queue storing the content list changed by the content list queue management module; a content pre-fetch module pre-fetching at least one element of content from the content providing servers based on the second content list queue and storing the content in a local storage unit; and a content reproduction module seamlessly reproducing the at least one element of content stored in the local storage unit.