公开(公告)号：US06784031B2

公开(公告)日：2004-08-31

申请号：US10324720

申请日：2002-12-19

Applicant: Sung Jae Joo ,  Seok Kiu Lee

Inventor： Sung Jae Joo ,  Seok Kiu Lee

IPC: H01L2100

CPC classification number: C23C16/46

Abstract: Methods for forming thin films of semiconductor devices, and more specifically, methods for forming thin films of semiconductor devices, wherein the semiconductor substrate is subjected to a thin film formation process in a thin film formation apparatus containing a chamber, a susceptor vertically movable in the chamber and a heater disposed within the susceptor, the method comprising a preheating process for stabilizing the internal temperature of the chamber by vertically moving the susceptor a predetermined number of times prior to the thin film formation process.

Abstract translation: 用于形成半导体器件的薄膜的方法，更具体地，用于形成半导体器件的薄膜的方法，其中半导体衬底在包含腔室的薄膜形成设备中进行薄膜形成工艺，可在 室和设置在基座内的加热器，该方法包括预热过程，用于通过在薄膜形成过程之前将基座垂直移动预定次数来稳定室的内部温度。

公开(公告)号：US06541355B2

公开(公告)日：2003-04-01

申请号：US10034392

申请日：2001-12-28

Applicant: Sung Jae Joo ,  Chang Woo Ryoo

Inventor： Sung Jae Joo ,  Chang Woo Ryoo

IPC: H01L2120

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method of selective epitaxial growth for a semiconductor device is disclosed. By employing a hydrogen gas as a selectivity promoting gas in addition to a chlorine gas conventionally used, the method can guarantee the selectivity of epitaxial growth and further increase the growth rate of an epitaxial layer. The method begins with loading a semiconductor substrate into a reaction chamber. The substrate has a mask layer, which is selectively formed thereon to define a first portion exposed beyond the mask layer and a second portion covered by the mask layer. Next, a source gas is supplied into the reaction chamber so that the source gas is adsorbed on the first portion and thus the epitaxial layer is selectively formed on the first portion. Then, the selectivity promoting gas including the H2 gas into the reaction chamber, whereby any nucleus of semiconductor material is removed from the mask layer. Thereafter, the source gas and the selectivity promoting gas are sequentially and repeatedly supplied until the semiconductor epitaxial layer is grown to a desired thickness.

Abstract translation: 公开了一种用于半导体器件的选择性外延生长的方法。 除了常规使用的氯气之外，通过使用氢气作为选择性促进气体，该方法可以保证外延生长的选择性并进一步增加外延层的生长速率。 该方法开始于将半导体衬底加载到反应室中。 衬底具有掩模层，其被选择性地形成在其上以限定暴露于掩模层外的第一部分和被掩模层覆盖的第二部分。 接下来，将源气体供应到反应室中，使得源气体吸附在第一部分上，因此在第一部分上选择性地形成外延层。 然后，将包含H 2气体的选择性促进气体引入反应室，由此从掩模层除去半导体材料的任何核。 此后，依次重复地供给源气体和选择性促进气体，直到半导体外延层生长至期望的厚度为止。

公开(公告)号：US06676764B2

公开(公告)日：2004-01-13

申请号：US10016010

申请日：2001-12-10

Applicant: Sung Jae Joo

Inventor： Sung Jae Joo

IPC: B08B704

CPC classification number: H01L21/02046 ,  B08B7/0071 ,  C23C16/0236 ,  C30B25/02 ,  C30B29/22 ,  C30B33/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661 ,  Y10S134/902 ,  Y10S438/906

Abstract: The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element is aligned in a silicon epitaxial layer growth chamber, disposed separated from the substrate, a cleaning gas is inserted into the chamber and is decomposed into an atom or radical state having high reactivity in a gas phase according to heat generation of the high temperature heating element, and is diffused into the substrate, whereby a substrate cleaning reaction is performed at a substrate temperature ranging from 400 to 600° C.

Abstract translation: 本发明公开了一种用于在选择性外延生长工艺中生长硅外延层之前清洁衬底表面将形成硅外延层的方法。 首先，将高温加热元件排列在与基板分离设置的硅外延层生长室中，将清洁气体插入室中，并根据热量在气相中分解成具有高反应性的原子或自由基状态 生成高温加热元件，并且扩散到基板中，由此在400-600℃的基板温度下进行基板清洗反应。