公开(公告)号：US09939511B2

公开(公告)日：2018-04-10

申请号：US15514545

申请日：2015-09-16

Applicant: SunEdison Semiconductor Limited (UEN201334164H)

Inventor： Igor Rapoport ,  Robert James Crepin ,  Patrick Alan Taylor

IPC: H01L21/66 ,  H01L21/322 ,  H01L21/324 ,  G01R31/26 ,  G01R31/28 ,  G01R35/00 ,  H01L21/265 ,  H01L29/167 ,  H01L29/36 ,  H01L21/266 ,  H01L29/207

CPC classification number: G01R35/007 ,  G01R31/2648 ,  G01R31/2831 ,  G01R35/005 ,  H01L21/26506 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/3221 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L29/167 ,  H01L29/207 ,  H01L29/36

Abstract: A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.

公开(公告)号：US20170234960A1

公开(公告)日：2017-08-17

申请号：US15514545

申请日：2015-09-16

Applicant: SunEdison Semiconductor Limited (UEN201334164H)

Inventor： Igor Rapoport ,  Robert James Crepin ,  Patrick Alan Taylor

IPC: G01R35/00 ,  H01L21/265 ,  H01L29/207 ,  H01L29/167 ,  H01L29/36 ,  H01L21/266 ,  G01R31/26 ,  H01L21/324

CPC classification number: G01R35/007 ,  G01R31/2648 ,  G01R31/2831 ,  G01R35/005 ,  H01L21/26506 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/3221 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L29/167 ,  H01L29/207 ,  H01L29/36

Abstract: A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.