摘要:
A MEMS component is monitored to determine its status. Sensors are deployed to sense the MEMS component and produce detection signals that are analyzed to determine the MEMS component state. An indicator device alerts a user of the status, particularly if the MEMS component has failed. Additionally, the MEMS component monitoring system may be practiced as a design structure encoded on computer readable storage media as part of a circuit design system.
摘要:
A memory sub-system and a method for operating the same. The memory sub-system includes (a) a main memory, (b) an ECC circuit, (c) a hard fail identifier circuit, (d) a repair circuit, (e) a redundant memory, and (f) a threshold setting circuit. The ECC circuit is capable of (i) detecting a first bit fail, (ii) sending an error flag signal to the hard fail identifier circuit, (iii) sending a first location address, a first bit location of the first bit fail, and a repaired data from the first location address to the hard fail identifier circuit. The hard fail identifier circuit is capable of (i) determining the number of times of failure occurring at the first bit fail, (ii) determining whether the number of times of failure is equal to a predetermined threshold value, and (iii) if so, sending a threshold reached signal.
摘要:
In connection with a logic circuit including a mask generator for determining a value for a so-called "sticky bit" in a binary number to be truncated and rounded, an intermediate signal is taken from the mask generator and an Exclusive-OR function applied to adjacent bits to generate a second mask containing or adjacent to a transition between the portion of the number to be dropped and the portion to be retained in the truncated number. The second mask is applied to different overlapping groups of bits in a portion of the number which contains the least significant bit and the guard bit as determined from the number of bits to be dropped, for example, by shifting out from a shifter, as the number is truncated and rounded to extract a specific bit in each group of bits. By extracting such specific bits using a mask, the extraction process is removed from the critical path of the processor which includes the shifter and the extraction process can proceed in parallel with the shifting process.
摘要:
An effective address limit checker reduces the logic delay in the limit checking path. The address limit checker comprises an effective address (EA) adder and limit check logic. The EA adder includes a first carry save adder receiving a displacement, an index and a base address for calculating an effective address, and a second carry select adder receiving partial sum and carry outputs of said first adder for calculating an effective address carry out. The outputs of the EA adder are input to the limit checking logic together with an address limit value and an addressability mode field. The limit checking logic includes a third adder for calculating first partial limit information based on the first adder results and the limit value, and a fourth adder for calculating second partial limit information based on the first adder results and the limit value and conditioned carry out values of the third adder. The third and fourth adders are each composed of a carry save adder and a carry select adder. Conditional carry logic responsive to output values of the third adder controls the operation of the fourth adder based on the addressability mode field. Limit exceeded logic responsive to the carry out of the fourth adder and the second adder asserts a limit check condition.
摘要:
A circuit and a method for adjusting the performance of an integrated circuit, the circuit includes: first and second sets of FETs having respective first and second threshold voltages, the first threshold voltage different from the second threshold voltage; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and a performance measurement of the second monitor circuit; and a control unit configured to generate a control signal to a voltage regulator based on the compare signal, the voltage regulator configured to supply a bias voltage to wells of FETs of the second set of FETs, the value of the bias voltage based on the control signal.
摘要:
A circuit and a method for adjusting the performance of an integrated circuit, the circuit includes: first and second sets of FETs having respective first and second threshold voltages, the first threshold voltage different from the second threshold voltage; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit adapted to generate a compare signal based on a performance measurement of the first monitor circuit and a performance measurement of the second monitor circuit; and a control unit adapted to generate a control signal to a voltage regulator based on the compare signal, the voltage regulator adapted to supply a bias voltage to wells of FETs of the second set of FETs, the value of the bias voltage based on the control signal.
摘要:
A design structure. The design structure includes: a first set of FETs having a designed first Vt and a second set of FETs having a designed second Vt, the first Vt different from the second Vt; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and of the second monitor circuit; a control unit responsive to the compare signal and configured to generate a control signal regulator based on the compare signal; and an adjustable voltage regulator responsive to the control signal and configured to voltage bias wells of FETs of the second set of FETs, the value of the voltage bias applied based on the control signal.
摘要:
A circuit and a method for adjusting the performance of an integrated circuit, the method includes: comprising: (a) measuring the performance of a first monitor circuit having at least one field effect transistor (FET) of a first set of FETs, each FET of the first set of FETs having a designed first threshold voltage; (b) measuring the performance of a second monitor circuit having at least one field effect transistor (FET) of a second set of FETs, each FET of the second set of FETs having a designed second threshold voltage, the second threshold voltage different from the first threshold voltage; and (c) applying a bias voltage to wells of the FETs of the second set of FETs based on comparing a measured performance of the first and second monitor circuits to specified performances of the first and second monitor circuits.
摘要:
A memory sub-system and a method for operating the same. The memory sub-system includes (a) a main memory, (b) an ECC circuit, (c) a hard fail identifier circuit, (d) a repair circuit, (e) a redundant memory, and (f) a threshold setting circuit. The ECC circuit is capable of (i) detecting a first bit fail, (ii) sending an error flag signal to the hard fail identifier circuit, (iii) sending a first location address, a first bit location of the first bit fail, and a repaired data from the first location address to the hard fail identifier circuit. The hard fail identifier circuit is capable of (i) determining the number of times of failure occurring at the first bit fail, (ii) determining whether the number of times of failure is equal to a predetermined threshold value, and (iii) if so, sending a threshold reached signal.
摘要:
A circuit and a method for adjusting the performance of an integrated circuit, the circuit includes: first and second sets of FETs having respective first and second threshold voltages, the first threshold voltage different from the second threshold voltage; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit adapted to generate a compare signal based on a performance measurement of the first monitor circuit and a performance measurement of the second monitor circuit; and a control unit adapted to generate a control signal to a voltage regulator based on the compare signal, the voltage regulator adapted to supply a bias voltage to wells of FETs of the second set of FETs, the value of the bias voltage based on the control signal.