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    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    4.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开

    公开(公告)号：US20120040518A1

    公开(公告)日：2012-02-16

    申请号：US13284912

    申请日：2011-10-30

    Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC: H01L21/20

    CPC classification number: C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Plasma deposition of amorphous semiconductors at microwave frequencies
    5.
    发明授权
    Plasma deposition of amorphous semiconductors at microwave frequencies 失效
    微波等离子体沉积非晶半导体

    公开(公告)号：US08048782B1

    公开(公告)日：2011-11-01

    申请号：US12855631

    申请日：2010-08-12

    Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC: H01L21/00

    CPC classification number: C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Abstract translation: 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Plasma deposition of amorphous semiconductors at microwave frequencies
    6.
    发明授权
    Plasma deposition of amorphous semiconductors at microwave frequencies 失效
    微波等离子体沉积非晶半导体

    公开(公告)号：US08222125B2

    公开(公告)日：2012-07-17

    申请号：US12855637

    申请日：2010-08-12

    Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC: H01L21/20 ,  H01L21/205 ,  C23C16/00 ,  C23C16/24 ,  C23C16/50 ,  C23C16/511

    CPC classification number: H01L31/03767 ,  C23C16/24 ,  C23C16/452 ,  H01J37/32211 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/3277 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/065 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Abstract translation: 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    7.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 失效
    微波频率下非晶半导体的等离子体沉积

    公开(公告)号：US20120040492A1

    公开(公告)日：2012-02-16

    申请号：US12855637

    申请日：2010-08-12

    Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC: H01L31/18

    CPC classification number: H01L31/03767 ,  C23C16/24 ,  C23C16/452 ,  H01J37/32211 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/3277 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/065 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. Suitable deposition species include precursors that contain silicon, germanium, fluorine, and/or hydrogen. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Abstract translation: 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的非预期沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以激活或激发它们到有助于形成薄膜材料的反应状态。 导管物理地隔离在微波功率传递的点处将反应或以其他方式组合以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 合适的沉积物质包括含有硅，锗，氟和/或氢的前体。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Monolithic Integration of Photovoltaic Cells
    9.
    发明申请
    Monolithic Integration of Photovoltaic Cells 审中-公开
    光伏电池的整体整合

    公开(公告)号：US20100248413A1

    公开(公告)日：2010-09-30

    申请号：US12414689

    申请日：2009-03-31

    Applicant: David Strand ,  Stanford R. Ovshinsky

    Inventor： David Strand ,  Stanford R. Ovshinsky

    IPC: H01L31/02 ,  H01L21/98

    CPC classification number: H01L31/056 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/541

    Abstract: A method of forming a photovoltaic device on a substrate, especially an opaque substrate. The method includes forming a photovoltaic material on a substrate and removing the substrate. The method may include patterning the photovoltaic material to form a plurality of photovoltaic devices and configuring the devices in series to achieve monolithic integration. The method may include forming additional layers on the substrate, such as one or more of a protective material, a transparent conductor, a back conductor, an adhesive layer, and a laminate support layer. When the substrate is opaque, the method provides the option of ordering the layers so that a transparent conductor is formed before the back reflector of a photovoltaic stack. This ordering of layers facilitates monolithic integration and the ability to remove the substrate allows the earlier-formed transparent conductor to serve as the point of incidence for receiving the light that excites the photovoltaic material. The method enables high speed manufacturing of monolithically integrated photovoltaic devices on opaque substrates.

    Abstract translation: 在基板上形成光电器件的方法，特别是不透明基板。 该方法包括在基板上形成光伏材料并去除基板。 该方法可以包括图案化光伏材料以形成多个光伏器件并且串联配置器件以实现单片集成。 该方法可以包括在基底上形成附加层，例如保护材料，透明导体，背导体，粘合剂层和叠层支撑层中的一种或多种。 当基板是不透明的时，该方法提供排列层的选择，使得在光伏堆叠的后反射器之前形成透明导体。 层的这种顺序有助于单片整合，并且去除衬底的能力允许较早形成的透明导体用作接收激发光伏材料的光的入射点。 该方法能够在不透明衬底上高速制造单片集成光伏器件。

    PLASMA DEPOSITION OF AMORPHOUS SEMICONDUCTORS AT MICROWAVE FREQUENCIES
    10.
    发明申请
    PLASMA DEPOSITION OF AMORPHOUS SEMICONDUCTORS AT MICROWAVE FREQUENCIES 失效
    在微波频率下等离子体沉积非晶半导体

    公开(公告)号：US20120040493A1

    公开(公告)日：2012-02-16

    申请号：US12855645

    申请日：2010-08-12

    Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC: H01L31/18

    CPC classification number: C23C16/511 ,  C23C16/24 ,  C23C16/545 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262

    Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Abstract translation: 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

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