公开(公告)号：US20140363587A1

公开(公告)日：2014-12-11

申请号：US14366231

申请日：2012-12-21

Applicant: Song Whe Huh ,  Jeung Hoon Han

Inventor： Song Whe Huh ,  Jeung Hoon Han

IPC: B05D3/04 ,  H01L21/02

CPC classification number: H01L21/68764 ,  B05D3/044 ,  C23C16/509 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02 ,  H01L21/02057 ,  H01L21/68771

Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.

Abstract translation: 公开了一种有利于提高薄膜材料的均匀性的基板处理装置和方法，并且还通过使用彼此分开设置的等离子体形成空间和源气体分配空间来有助于控制薄膜的质量，其中基板处理装置包括 处理室; 用于支撑多个基板的基板支撑件，可旋转地设置在处理室内的基板支撑件; 以及电极单元，其布置在所述基板支撑件上方，并设置有所述等离子体形成空间和所述源气体分配空间，其中所述等离子体形成空间与所述源气体分配空间在空间上分离。

公开(公告)号：US09960073B2

公开(公告)日：2018-05-01

申请号：US15180935

申请日：2016-06-13

Applicant: Song Whe Huh ,  Jeung Hoon Han

Inventor： Song Whe Huh ,  Jeung Hoon Han

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/509

CPC classification number: H01L21/68764 ,  B05D3/044 ,  C23C16/509 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02 ,  H01L21/02057 ,  H01L21/68771

Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and an electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.

公开(公告)号：US09387510B2

公开(公告)日：2016-07-12

申请号：US14366231

申请日：2012-12-21

Applicant: Song Whe Huh ,  Jeung Hoon Han

Inventor： Song Whe Huh ,  Jeung Hoon Han

IPC: B05D3/04 ,  C23C16/509 ,  H01L21/687 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/68764 ,  B05D3/044 ,  C23C16/509 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02 ,  H01L21/02057 ,  H01L21/68771

Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.

Abstract translation: 公开了一种有利于提高薄膜材料的均匀性的基板处理装置和方法，并且还通过使用彼此分开设置的等离子体形成空间和源气体分配空间来有助于控制薄膜的质量，其中基板处理装置包括 处理室; 用于支撑多个基板的基板支撑件，可旋转地设置在处理室内的基板支撑件; 以及电极单元，其布置在所述基板支撑件上方，并设置有所述等离子体形成空间和所述源气体分配空间，其中所述等离子体形成空间与所述源气体分配空间在空间上分离。