Abstract:
A deposition system and film thickness monitoring device thereof. The film thickness monitoring device for monitoring thickness of a thin film coated on an optical substrate includes a laser light source, a retro-reflector, and a light receiver. The laser light source and the retro-reflector are disposed on opposite sides of the optical substrate. First, a light beam is emitted by the laser light source and then passes through the thin film along a first path. Second, the light beam is reflected by the retro-reflector and then passes through the thin film again along a second path parallel to the first path. Third, the light beam is received by the light receiver.
Abstract:
A deposition system and film thickness monitoring device thereof. The film thickness monitoring device for monitoring thickness of a thin film coated on an optical substrate includes a laser light source, a retro-reflector, and a light receiver. The laser light source and the retro-reflector are disposed on opposite sides of the optical substrate. First, a light beam is emitted by the laser light source and then passes through the thin film along a first path. Second, the light beam is reflected by the retro-reflector and then passes through the thin film again along a second path parallel to the first path. Third, the light beam is received by the light receiver.
Abstract:
A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. UV curing of as-deposited PECVD silicon nitride films, for example, has been shown to produce films with stresses of at least 1.65 E10 dynes/cm2. Other dielectric capping layer film materials show similar results. In transistor implementations, the stress from a source/drain region capping layer composed of such a film is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in the NMOS channel.
Abstract:
Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
Abstract:
A primary cell having an anode comprising lithium and a cathode comprising iron disulfide (FeS2) and carbon particles. The electrolyte comprises a lithium salt dissolved in a solvent mixture. Iron disulfide powder and carbon black is preferably premixed and stored. A cathode slurry is prepared comprising iron disulfide, carbon black, binder, and a liquid solvent. The mixture is coated onto a substrate and solvent evaporated leaving a dry cathode coating on the substrate. The cathode coating is then baked at elevated temperatures in atmosphere under partial vacuum or in an atmosphere of nitrogen or inert gas. The anode and cathode can be spirally wound with separator therebetween and inserted into the cell casing with electrolyte then added.
Abstract:
Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.
Abstract:
A magnetic actuator. The magnetic actuator comprises a first magnet, a second magnet, a first yoke, and a first coil. The second magnet is arranged axially with respect to the first magnet with repulsion therebetween. The first yoke is disposed between the first magnet and the second magnet, and the magnetic field lines produced by the first magnet and the second magnet extend from the first yoke. The first coil surrounds and corresponds to the first yoke. When a current is occurred in the first coil, the magnetic force generated between the first magnet and the second magnet will actuates the first coil to move axially with respect to the first and second magnets.
Abstract:
A magnetic actuator. A yoke comprises a first opening and a second opening, a frame, and a path. A first magnet is disposed in the first opening in the vicinity of the frame. A second magnet is disposed in the second opening in the vicinity of the frame. A coil comprises a wire surrounding the path. A light shield is connected to an end of the coil. When current passes through the coil, the coil moves along the path by magnetic induction between the first magnet and the second magnet such that the iris diaphragm is adjustable by the light shield.
Abstract:
A motor includes a stator, a rotor, a top magnetic structure, and a bottom magnetic structure. The stator is disposed in a frame. The rotor is also disposed in the frame, corresponding to the stator. The rotor includes a shaft extending axially from the rotor. The bottom magnetic structure is at the bottom of the frame. The top magnetic structure is on the top of the frame. The top and bottom magnetic structures are opposite to each other in an axial direction. Magnetic attraction generated between the first magnetic structure and the shaft, and the second magnetic structure and the shaft positions the shaft therebetween such that the first magnetic structure, the second magnetic structure, and the shaft are coaxially aligned.
Abstract:
A light tunnel structure includes a plurality of plates and an adhesive (a bonding glue). The plates are connected to each other to form a light tunnel with at least one gap formed at each of the junctions. The adhesive (bonding glue) is filled within the gaps at the junctions. In addition, a manufacturing method of the light tunnel structure is disclosed.