公开(公告)号：US08962494B2

公开(公告)日：2015-02-24

申请号：US14040737

申请日：2013-09-30

申请人： Shanghai Huali Microelectronics Corporation

发明人： Jun Huang ,  Zhibiao Mao ,  Ermin Chong

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/311 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L21/28

CPC分类号： H01L21/31144 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/3088 ,  H01L21/32139 ,  H01L21/823462

摘要： The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide firm to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.

摘要翻译： 本发明提供制造双栅极氧化物器件的方法。 该方法包括在由氧化物薄膜沉积的衬底上涂覆光致抗蚀剂; 通过曝光和显影去除一些光致抗蚀剂以将氧化物薄膜划分成待蚀刻的第一区域和由残留的光致抗蚀剂涂覆的第二区域; 在剩余光致抗蚀剂上涂覆RELACS材料，加热形成基于RELACS材料与光致抗蚀剂中的高分子化合物之间的交联反应的保护膜; 执行紫外线辐射以加强和固化保护膜; 通过蚀刻和去除残留的光致抗蚀剂去除第一区域中的氧化物薄膜; 并再次沉积氧化物，以在第一区域和第二区域中形成不同厚度的氧化物层，以形成双栅极氧化物结构。

公开(公告)号：US20140342565A1

公开(公告)日：2014-11-20

申请号：US14040737

申请日：2013-09-30

申请人： Shanghai Huali Microelectronics Corporation

发明人： Jun Huang ,  Zhibiao Mao ,  Ermin Chong

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/3088 ,  H01L21/32139 ,  H01L21/823462

摘要： The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide film to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.

摘要翻译： 本发明提供制造双栅极氧化物器件的方法。 该方法包括在由氧化物薄膜沉积的衬底上涂覆光致抗蚀剂; 通过曝光和显影去除一些光致抗蚀剂以将氧化物薄膜划分成待蚀刻的第一区域和由残留的光致抗蚀剂涂覆的第二区域; 在剩余光致抗蚀剂上涂覆RELACS材料，加热形成基于RELACS材料与光致抗蚀剂中的高分子化合物之间的交联反应的保护膜; 执行紫外线辐射以加强和固化保护膜; 通过蚀刻和去除残留的光致抗蚀剂去除第一区域中的氧化物薄膜; 并再次沉积氧化膜以在第一区域和第二区域中形成不同厚度的氧化物层，以便形成双栅氧化物结构。