公开(公告)号：US09171731B2

公开(公告)日：2015-10-27

申请号：US14085380

申请日：2013-11-20

申请人： Shanghai Huali Microelectronics Corporation

发明人： Jun Huang ,  ZhiBiao Mao ,  QuanBo Li ,  ZhiFeng Gan ,  RunLing Li

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/28 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/308

CPC分类号： H01L21/306 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139

摘要： The invention relates to microelectronic technology and, more specifically, relates to a method of forming a gate with a LELE double pattern. The method adopts an ONO structure (Oxide-SiN-Oxide). The ONO structure is exposed twice, and the advanced patterning film is used as a mask in the processing of polysilicon etching. The ONO structure is used to replace the traditional hardmask of silicon oxide, and the substructure of ODL (Organic Under Layer) which is based on the spin-on, and the middle layer structure of SHB (Si-based hardmask). The method saves cost and improves the process of advanced patterning film as a mask with the nodes in 40 nm and above which is applied to the process with the nodes in 22/20 nm and below. Consequently, the maturity and stability of the process for poly gate with the nodes in 22/20 nm and below are improved.

摘要翻译： 本发明涉及微电子技术，更具体地说，涉及一种用LELE双重图案形成门的方法。 该方法采用ONO结构（Oxide-SiN-Oxide）。 ONO结构暴露两次，并且在多晶硅蚀刻的处理中使用先进的图案化膜作为掩模。 ONO结构用于替代传统的氧化硅硬掩模，以及基于旋涂的ODL（有机底层）的底层结构和SHB（Si基硬掩模）的中间层结构。 该方法节省了成本，并改进了高级图案化膜作为掩模的过程，其中40nm及以上的节点被应用于具有22/20nm及以下的节点的过程。 因此，22/20nm及以下节点的多晶硅栅极的成熟度和稳定性得到改善。