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1.发明申请Semiconductor device with a tapered hole formed using multiple layers with different etching rates 失效具有锥形孔的半导体器件，其使用具有不同蚀刻速率的多层形成公开(公告)号：US20020113239A1
公开(公告)日：2002-08-22
申请号：US10125954
申请日：2002-04-18
IPC分类号： H01L021/00 , H01L029/04 , H01L031/036 , H01L027/12
CPC分类号： H01L29/66757 , H01L21/76804 , H01L23/5283 , H01L23/5329 , H01L29/41733 , H01L29/42384 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The deposition condition of the second insulating film is varied during the deposition so that the etching rate of the second insulating film increases from a lower portion toward an upper portion. Thereby, a contact hole which is formed by etching through the first and second insulating films has a tapered configuration to improve a reliability of a connection made therein.
摘要翻译： 具有通过层间绝缘体改善的接触孔的半导体器件。 沉积包括氮化硅的第一绝缘膜。 包含氧化硅的第二绝缘膜沉积在第一绝缘膜上。 第二绝缘膜的沉积条件在沉积期间变化，使得第二绝缘膜的蚀刻速率从下部向上部增加。 因此，通过蚀刻通过第一和第二绝缘膜形成的接触孔具有锥形构造，以提高其中形成的连接的可靠性。
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公开(公告)号：US20040127069A1
公开(公告)日：2004-07-01
申请号：US10737855
申请日：2003-12-18
IPC分类号： H01L021/31 , H01L021/469
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。
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