公开(公告)号：US10930840B2

公开(公告)日：2021-02-23

申请号：US16255698

申请日：2019-01-23

Applicant: Seagate Technology LLC

Inventor： Cheng Wang ,  Pin-Wei Huang ,  Ganping Ju ,  Kuo-Hsing Hwang

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

Abstract: A memristor may include an exchange-coupled composite (ECC) portion to provide three or more nonvolatile magneto-resistive states. The ECC portion may include a continuous layer and a granular layer magnetically exchange coupled to the continuous layer. A plurality of memristors may be used in a system to, for example, define a neural network.

公开(公告)号：US20190229260A1

公开(公告)日：2019-07-25

申请号：US16255698

申请日：2019-01-23

Applicant: Seagate Technology LLC

Inventor： Cheng Wang ,  Pin-Wei Huang ,  Ganping Ju ,  Kuo-Hsing Hwang

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02

Abstract: A memristor may include an exchange-coupled composite (ECC) portion to provide three or more nonvolatile magneto-resistive states. The ECC portion may include a continuous layer and a granular layer magnetically exchange coupled to the continuous layer. A plurality of memristors may be used in a system to, for example, define a neural network.

公开(公告)号：US11963464B2

公开(公告)日：2024-04-16

申请号：US17181365

申请日：2021-02-22

Applicant: Seagate Technology LLC

Inventor： Cheng Wang ,  Pin-Wei Huang ,  Ganping Ju ,  Kuo-Hsing Hwang

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10B61/10 ,  H10N50/10 ,  H10N50/80

Abstract: A memristor may include an exchange-coupled composite (ECC) portion to provide three or more nonvolatile magneto-resistive states. The ECC portion may include a continuous layer and a granular layer magnetically exchange coupled to the continuous layer. A plurality of memristors may be used in a system to, for example, define a neural network.

公开(公告)号：US20210175417A1

公开(公告)日：2021-06-10

申请号：US17181365

申请日：2021-02-22

Applicant: Seagate Technology LLC

Inventor： Cheng Wang ,  Pin-Wei Huang ,  Ganping Ju ,  Kuo-Hsing Hwang

IPC: H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08

Abstract: A memristor may include an exchange-coupled composite (ECC) portion to provide three or more nonvolatile magneto-resistive states. The ECC portion may include a continuous layer and a granular layer magnetically exchange coupled to the continuous layer. A plurality of memristors may be used in a system to, for example, define a neural network.