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公开(公告)号：US20140209368A1
公开(公告)日：2014-07-31
申请号：US13753730
申请日：2013-01-30
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Carolyn Pitcher Van Dorn , Lily Horng Youtt , Daniel Boyd Sullivan
CPC classification number: H05K1/115 , G11B5/102 , G11B5/3173 , G11B5/6094 , H05K1/0219 , H05K1/0259 , H05K1/053 , Y10T29/49124
Abstract: The formation of substrate electrical connections on thin film heads is one source of resulting surface topography. In accordance with one implementation, such topography can be reduced by a process that includes depositing a first layer of basecoat, creating electrical recessed vias in one or more plating processes, and depositing a second layer of basecoat on top of the electrical vias and on top of the first layer of basecoat. In one implementation, the first and second layers of basecoat have a combined height that is substantially equal to the height of the electrical recessed vias. In one implementation, the resulting topographical features are small enough that they can be planarized without creating a lack of uniformity in the total basecoat thickness across the wafer.
Abstract translation: 在薄膜头上形成衬底电连接是所得表面形貌的一个来源。 根据一个实施方案，可以通过包括沉积第一层底漆的方法，在一个或多个电镀工艺中产生电凹槽，以及在电气通孔顶部和顶部沉积第二层底漆的方法来减少这种形貌 的第一层底漆。 在一个实施方式中，第一和第二底色层的组合高度基本上等于电气凹槽的高度。 在一个实施方案中，所得到的形貌特征足够小，使得它们可以被平坦化，而不会造成跨越晶片的总底涂层厚度的不均匀性。
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公开(公告)号：US09426886B2
公开(公告)日：2016-08-23
申请号：US13753730
申请日：2013-01-30
Applicant: Seagate Technology LLC
Inventor： Carolyn Pitcher Van Dorn , Lily Horng Youtt , Daniel Boyd Sullivan
CPC classification number: H05K1/115 , G11B5/102 , G11B5/3173 , G11B5/6094 , H05K1/0219 , H05K1/0259 , H05K1/053 , Y10T29/49124
Abstract: The formation of substrate electrical connections on thin film heads is one source of resulting surface topography. In accordance with one implementation, such topography can be reduced by a process that includes depositing a first layer of basecoat, creating electrical recessed vias in one or more plating processes, and depositing a second layer of basecoat on top of the electrical vias and on top of the first layer of basecoat. In one implementation, the first and second layers of basecoat have a combined height that is substantially equal to the height of the electrical recessed vias. In one implementation, the resulting topographical features are small enough that they can be planarized without creating a lack of uniformity in the total basecoat thickness across the wafer.
Abstract translation: 在薄膜头上形成衬底电连接是所得表面形貌的一个来源。 根据一个实施方案，可以通过包括沉积第一层底漆的方法，在一个或多个电镀工艺中产生电凹槽，以及在电气通孔顶部和顶部沉积第二层底漆的方法来减少这种形貌 的第一层底漆。 在一个实施方式中，第一和第二底色层的组合高度基本上等于电气凹槽的高度。 在一个实施方案中，所得到的形貌特征足够小，使得它们可以被平坦化，而不会造成跨越晶片的总底涂层厚度的不均匀性。
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Patent Agency Ranking
公开(公告)号：US20160293186A9
公开(公告)日：2016-10-06
申请号：US14309012
申请日：2014-06-19
Applicant: Seagate Technology LLC
Inventor： Carolyn Pitcher Van Dorn , Thomas Roy Boonstra , Eric Walter Singleton , Shaun Eric McKinlay
IPC: G11B5/39
CPC classification number: G11B5/39 , G11B5/11 , G11B5/112 , G11B5/3169 , G11B5/3912 , G11B5/40 , Y10T428/1121 , Y10T428/1164
Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
Abstract translation: 用于传感器头的制造读取器结构的公差继续增长，并且相应的存储介质中的存储密度增加。 在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划伤，同时处理读取器结构的其它未受保护的层。 例如，在机械或化学机械抛光期间，停止层可能具有非常低的抛光速率。 可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。 然后可以例如在机械或化学机械抛光完成之后通过蚀刻去除停止层。
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公开(公告)号：US20140302345A1
公开(公告)日：2014-10-09
申请号：US14309012
申请日：2014-06-19
Applicant: Seagate Technology LLC
Inventor： Carolyn Pitcher Van Dorn , Thomas Roy Boonstra , Eric Walter Singleton , Shaun Eric McKinlay
IPC: G11B5/39
CPC classification number: G11B5/39 , G11B5/11 , G11B5/112 , G11B5/3169 , G11B5/3912 , G11B5/40 , Y10T428/1121 , Y10T428/1164
Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
Abstract translation: 用于传感器头的制造读取器结构的公差继续增长，并且相应的存储介质中的存储密度增加。 在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划伤，同时处理读取器结构的其它未受保护的层。 例如，在机械或化学机械抛光期间，停止层可能具有非常低的抛光速率。 可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。 然后可以例如在机械或化学机械抛光完成之后通过蚀刻去除停止层。
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公开(公告)号：US09542961B2
公开(公告)日：2017-01-10
申请号：US14309012
申请日：2014-06-19
Applicant: Seagate Technology LLC
Inventor： Carolyn Pitcher Van Dorn , Thomas Roy Boonstra , Eric Walter Singleton , Shaun Eric McKinlay
CPC classification number: G11B5/39 , G11B5/11 , G11B5/112 , G11B5/3169 , G11B5/3912 , G11B5/40 , Y10T428/1121 , Y10T428/1164
Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
Abstract translation: 用于传感器头的制造读取器结构的公差继续增长，并且相应的存储介质中的存储密度增加。 在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划伤，同时处理读取器结构的其它未受保护的层。 例如，在机械或化学机械抛光期间，停止层可能具有非常低的抛光速率。 可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。 然后可以例如在机械或化学机械抛光完成之后通过蚀刻去除停止层。
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公开(公告)号：US09030782B2
公开(公告)日：2015-05-12
申请号：US13800222
申请日：2013-03-13
Applicant: Seagate Technology LLC
Inventor： Shaun Eric McKinlay , Eric W. Singleton , Carolyn Pitcher Van Dorn , Levent Colak , Thu-Van Thi Nguyen
CPC classification number: G11B5/112 , G11B5/3163 , G11B5/3912
Abstract: A data reader and associated method of making are generally provided. A data reader capable of sensing adjacent data bits may be configured at least with a magnetic stack disposed between first and second side shields. Each side shield may have a polish stop layer that is tuned to provide a first predetermined polish rate.
Abstract translation: 通常提供数据读取器和相关的制造方法。 可以至少利用设置在第一和第二侧面屏蔽之间的磁性堆叠来配置能够感测相邻数据位的数据读取器。 每个侧护罩可以具有调光以提供第一预定抛光速率的抛光停止层。
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公开(公告)号：US20140268422A1
公开(公告)日：2014-09-18
申请号：US13800222
申请日：2013-03-13
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Shaun Eric McKinlay , Eric W. Singleton , Carolyn Pitcher Van Dorn , Levent Colak , Thu-Van Thi Nguyen
IPC: G11B5/11
CPC classification number: G11B5/112 , G11B5/3163 , G11B5/3912
Abstract: A data reader and associated method of making are generally provided. A data reader capable of sensing adjacent data bits may be configured at least with a magnetic stack disposed between first and second side shields. Each side shield may have a polish stop layer that is tuned to provide a first predetermined polish rate.
Abstract translation: 通常提供数据读取器和相关的制造方法。 可以至少利用设置在第一和第二侧面屏蔽之间的磁性堆叠来配置能够感测相邻数据位的数据读取器。 每个侧护罩可以具有调光以提供第一预定抛光速率的抛光停止层。
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