公开(公告)号：US20070096675A1

公开(公告)日：2007-05-03

申请号：US11553224

申请日：2006-10-26

Applicant: Sang-yun KIM ,  Young-gie KIM

Inventor： Sang-yun KIM ,  Young-gie KIM

IPC: G05D1/00 ,  B64C13/18

CPC classification number: G05D1/0242 ,  G05D1/0225 ,  G05D2201/0203

Abstract: Disclosed is a mobile robot charge station return system, which may return a mobile robot to a charge station exactly and rapidly according to a charge station position guidance signal emitted from the charge station. The mobile robot charge station return system includes a charge station for transmitting charge station position guidance signals to different areas in such a way that different emitting distances of the charge station position guidance signals change according to a predetermined time period; and a mobile robot for receiving the charge station position guidance signals, calculating direction and distance information, and returning to the charge station according to the calculated direction and distance information.

Abstract translation: 公开了一种移动机器人充电站返回系统，其可以根据从充电站发出的充电站位置引导信号，将移动机器人精确快速地返回到充电站。 移动机器人充电站返回系统包括：充电站，用于将充电站位置引导信号发送到不同的区域，使得充电站位置引导信号的不同发射距离根据预定的时间段而改变; 以及移动机器人，用于接收充电站位置引导信号，计算方向和距离信息，并根据计算的方向和距离信息返回到充电站。

公开(公告)号：US20070233319A1

公开(公告)日：2007-10-04

申请号：US11690508

申请日：2007-03-23

Applicant: Hyoung-deuk IM ,  Sang-yun KIM

Inventor： Hyoung-deuk IM ,  Sang-yun KIM

IPC: G06F19/00

CPC classification number: G05D1/0242 ,  G05D1/0225 ,  G05D2201/0203 ,  G05D2201/0215

Abstract: A system is provided for returning a robot to a charger. In this regard, a charger is configured to provide a plurality of docking guide regions by outputting at least one guide signal superposed with at least one other signal to form a return region. Further, the robot is configured to return to the charger at a return speed by detecting the return region.

Abstract translation: 提供了一种将机器人返回到充电器的系统。 在这方面，充电器被配置为通过输出与至少一个其他信号重叠的至少一个引导信号来提供多个对接引导区域以形成返回区域。 此外，机器人被配置为通过检测返回区域以返回速度返回到充电器。

公开(公告)号：US20110199808A1

公开(公告)日：2011-08-18

申请号：US13023738

申请日：2011-02-09

Applicant: Chul-woo YI ,  Seong-jin JANG ,  Jin-seok KWAK ,  Tai-young KO ,  Joung-yeal KIM ,  Sang-yun KIM ,  Sang-kyun PARK ,  Jung-bae LEE

Inventor： Chul-woo YI ,  Seong-jin JANG ,  Jin-seok KWAK ,  Tai-young KO ,  Joung-yeal KIM ,  Sang-yun KIM ,  Sang-kyun PARK ,  Jung-bae LEE

IPC: G11C5/06 ,  G11C5/10 ,  H01L21/02

CPC classification number: G11C5/063 ,  G11C7/062 ,  G11C7/065 ,  G11C7/18 ,  G11C11/4091 ,  G11C11/4097 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10897 ,  Y10T29/41

Abstract: A semiconductor memory device having an open bitline memory structure from which an edge dummy memory block is removed, the semiconductor memory device includes a memory block, an edge sense amplification block including a first sense amplifier having a first bitline, a first complementary bitline, and a first amplification circuit comprising a first transistor having a first size, a central sense amplification block including a second sense amplifier having a second bitline, a second complementary bitline, and a second amplification circuit comprising a second transistor having a second size different from the first size, a capacitor block electrically connected to the edge sense amplification block.

Abstract translation: 一种具有开放位线存储器结构的半导体存储器件，其中除去边缘伪存储器块，所述半导体存储器件包括存储器块，边沿读出放大块，其包括第一读出放大器，所述第一读出放大器具有第一位线，第一互补位线和 第一放大电路，包括具有第一尺寸的第一晶体管，中央读出放大块，包括具有第二位线的第二读出放大器，第二互补位线和第二放大电路，所述第二放大电路包括第二晶体管， 电容器块电连接到边缘检测放大块。

公开(公告)号：US20130272047A1

公开(公告)日：2013-10-17

申请号：US13915338

申请日：2013-06-11

Applicant: Chul-woo YI ,  Seong-jin JANG ,  Jin-seok KWAK ,  Tai-young KO ,  Joung-yeal KIM ,  Sang-yun KIM ,  Sang-kyun PARK ,  Jung-bae LEE

Inventor： Chul-woo YI ,  Seong-jin JANG ,  Jin-seok KWAK ,  Tai-young KO ,  Joung-yeal KIM ,  Sang-yun KIM ,  Sang-kyun PARK ,  Jung-bae LEE

IPC: G11C5/06

CPC classification number: G11C5/063 ,  G11C7/062 ,  G11C7/065 ,  G11C7/18 ,  G11C11/4091 ,  G11C11/4097 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10897 ,  Y10T29/41

Abstract: A semiconductor memory device having an open bitline memory structure from which an edge dummy memory block is removed, the semiconductor memory device includes a memory block, an edge sense amplification block including a first sense amplifier having a first bitline, a first complementary bitline, and a first amplification circuit comprising a first transistor having a first size, a central sense amplification block including a second sense amplifier having a second bitline, a second complementary bitline, and a second amplification circuit comprising a second transistor having a second size different from the first size, a capacitor block electrically connected to the edge sense amplification block.

Abstract translation: 一种具有开放位线存储器结构的半导体存储器件，其中除去边缘伪存储器块，所述半导体存储器件包括存储器块，边沿读出放大块，其包括第一读出放大器，所述第一读出放大器具有第一位线，第一互补位线和 第一放大电路，包括具有第一尺寸的第一晶体管，中央读出放大块，包括具有第二位线的第二读出放大器，第二互补位线和第二放大电路，所述第二放大电路包括第二晶体管， 电容器块电连接到边缘检测放大块。

公开(公告)号：US20110142368A1

公开(公告)日：2011-06-16

申请号：US12913909

申请日：2010-10-28

Applicant: Gun-shik SHIN ,  Dong-hyun KIM ,  Jae-hun LEE ,  Sang-yun KIM

Inventor： Gun-shik SHIN ,  Dong-hyun KIM ,  Jae-hun LEE ,  Sang-yun KIM

IPC: G06K9/40

CPC classification number: G06T5/002 ,  G06T2207/20021

Abstract: A block-based image denoising method includes determining similarities between a current block and reference blocks within a search range around the current block, from among certain-sized blocks divided from an input image; determining weights of the reference blocks with respect to the current block based on the similarities; and generating resultant blocks by denoising the current block with respect to every block of the input image based on the weights of the reference blocks.

Abstract translation: 基于块的图像去噪方法包括：从当前块与当前块周围的搜索范围内的参考块之间确定与从输入图像分开的特定大小的块中的相似度; 基于相似度确定参考块相对于当前块的权重; 并且基于所述参考块的权重，通过对所述输入图像的每个块去除当前块来生成合成块。