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    Semiconductor substrates and manufacturing methods of the same
    4.
    发明申请
    Semiconductor substrates and manufacturing methods of the same 审中-公开

    公开(公告)号：US20110121390A1

    公开(公告)日：2011-05-26

    申请号：US12929455

    申请日：2011-01-26

    申请人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    IPC分类号： H01L27/12

    CPC分类号： H01L29/7841

    摘要： Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

    Semiconductor substrates and manufacturing methods of the same
    5.
    发明申请
    Semiconductor substrates and manufacturing methods of the same 有权
    半导体衬底及其制造方法相同

    公开(公告)号：US20090212364A1

    公开(公告)日：2009-08-27

    申请号：US12219360

    申请日：2008-07-21

    申请人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    IPC分类号： H01L27/12 ,  H01L21/00

    CPC分类号： H01L29/7841

    摘要： Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

    摘要翻译： 提供半导体基板及其制造方法。 半导体衬底包括衬底区域，绝缘区域和浮体区域。 绝缘区域设置在基板区域上。 浮体区域通过绝缘区域与基板区域分离，并且设置在绝缘区域上。 基板区域和浮体区域由具有相同特性的材料形成。 制造半导体衬底的方法包括通过蚀刻大块衬底形成至少一个浮体图案，通过蚀刻浮体图案的下部中间部分将本体衬底分离成衬底区域和浮体区域，以及填充绝缘体 在浮体区域和衬底区域之间的材料。

    Semiconductor devices and semiconductor apparatuses including the same
    6.
    发明申请
    Semiconductor devices and semiconductor apparatuses including the same 失效
    包括其的半导体器件和半导体器件

    公开(公告)号：US20090212320A1

    公开(公告)日：2009-08-27

    申请号：US12219990

    申请日：2008-07-31

    申请人： Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7391 ,  G11C11/404 ,  G11C2211/4016 ,  H01L21/84 ,  H01L27/1023 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10873 ,  H01L27/1203 ,  H01L29/7841 ,  H01L29/8618

    摘要： Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on the semiconductor substrate and on opposing sides of the body region, and first and second impurity doped regions disposed on an upper surface of the body region. The gate patterns may be separated from the first and second impurity doped regions by, or greater than, a desired distance, such that the gate patterns do not to overlap the first and second impurity doped regions in a direction perpendicular to the first and second impurity doped regions.

    摘要翻译： 提供包括其的半导体器件和半导体器件。 半导体器件包括设置在半导体衬底上的主体区域，设置在半导体衬底上并位于体区域的相对侧上的栅极图案，以及设置在身体区域的上表面上的第一和第二杂质掺杂区域。 栅极图案可以与第一和第二杂质掺杂区域分开或大于期望的距离，使得栅极图案在垂直于第一和第二杂质的方向上不与第一和第二杂质掺杂区域重叠 掺杂区域。

    Semiconductor substrates and manufacturing methods of the same
    7.
    发明授权
    Semiconductor substrates and manufacturing methods of the same 有权
    半导体衬底及其制造方法相同

    公开(公告)号：US07902007B2

    公开(公告)日：2011-03-08

    申请号：US12219360

    申请日：2008-07-21

    申请人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Tae-hee Lee ,  Dae-kil Cha ,  Yoon-dong Park

    IPC分类号： H01L21/84

    CPC分类号： H01L29/7841

    摘要： Semiconductor substrates and methods of manufacturing the same are provided. The semiconductor substrates include a substrate region, an insulation region and a floating body region. The insulation region is disposed on the substrate region. The floating body region is separated from the substrate region by the insulation region and is disposed on the insulation region. The substrate region and the floating body region are formed of materials having identical characteristics. The method of manufacturing the semiconductor substrate including forming at least one floating body pattern by etching a bulk substrate, separating the bulk substrate into a substrate region and a floating body region by etching a lower middle portion of the floating body pattern, and filling an insulating material between the floating body region and the substrate region.

    摘要翻译： 提供半导体基板及其制造方法。 半导体衬底包括衬底区域，绝缘区域和浮体区域。 绝缘区域设置在基板区域上。 浮体区域通过绝缘区域与基板区域分离，并且设置在绝缘区域上。 基板区域和浮体区域由具有相同特性的材料形成。 制造半导体衬底的方法包括通过蚀刻大块衬底形成至少一个浮体图案，通过蚀刻浮体图案的下部中间部分将本体衬底分离成衬底区域和浮体区域，以及填充绝缘体 在浮体区域和衬底区域之间的材料。

    Semiconductor devices and semiconductor apparatuses including the same
    8.
    发明授权
    Semiconductor devices and semiconductor apparatuses including the same 失效
    包括其的半导体器件和半导体器件

    公开(公告)号：US08258542B2

    公开(公告)日：2012-09-04

    申请号：US12219990

    申请日：2008-07-31

    申请人： Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

    发明人： Won-joo Kim ,  Dae-kil Cha ,  Tae-hee Lee ,  Yoon-dong Park

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7391 ,  G11C11/404 ,  G11C2211/4016 ,  H01L21/84 ,  H01L27/1023 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10873 ,  H01L27/1203 ,  H01L29/7841 ,  H01L29/8618

    摘要： Semiconductor devices and semiconductor apparatuses including the same are provided. The semiconductor devices include a body region disposed on a semiconductor substrate, gate patterns disposed on the semiconductor substrate and on opposing sides of the body region, and first and second impurity doped regions disposed on an upper surface of the body region. The gate patterns may be separated from the first and second impurity doped regions by, or greater than, a desired distance, such that the gate patterns do not to overlap the first and second impurity doped regions in a direction perpendicular to the first and second impurity doped regions.

    摘要翻译： 提供包括其的半导体器件和半导体器件。 半导体器件包括设置在半导体衬底上的主体区域，设置在半导体衬底上并位于体区域的相对侧上的栅极图案，以及设置在身体区域的上表面上的第一和第二杂质掺杂区域。 栅极图案可以与第一和第二杂质掺杂区域分开或大于期望的距离，使得栅极图案在垂直于第一和第二杂质的方向上不与第一和第二杂质掺杂区域重叠 掺杂区域。