公开(公告)号：US09318210B1

公开(公告)日：2016-04-19

申请号：US14611997

申请日：2015-02-02

Applicant: SanDisk Technologies, Inc.

Inventor： James V. Hart ,  Kenneth Louie ,  Khanh Nguyen ,  Man Mui

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/26 ,  G11C16/08 ,  G11C16/34

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3459 ,  G11C2211/5621

Abstract: When applying a sensing voltage at one end of a word line of a non-volatile memory circuit, an initial kick, where the voltage is initially raised somewhat above its final desired voltage, is used. Using on-chip circuitry for the determination of the RC time constant of the word lines allows for this kick to be trimmed to the specifics of the circuit. To further improve settling times for read operations is NAND type architectures, when raising the voltage to the desired read level on a selected word line, a reverse kick, where the non-selected word line's voltage is dropped briefly, can be applied to neighboring non-selected word lines.

Abstract translation: 当在非易失性存储器电路的字线的一端应用感测电压时，使用其中电压最初升高到其最终期望电压以上的初始踢脚。 使用片上电路来确定字线的RC时间常数允许将该脚趾修剪到电路的细节。 为了进一步提高读操作的建立时间，NAND型架构在将选定字线上的电压提高到期望的读取电平时，可以将未选择的字线的电压短暂地下降的反向跳转应用于相邻的非线性 - 选择的字线。