公开(公告)号：US20170088755A1

公开(公告)日：2017-03-30

申请号：US15254701

申请日：2016-09-01

Applicant: Samsung Electronics Co., Ltd. ,  FINE SEMITECH CORP.

Inventor： Byungchul YOO ,  Sungyong CHO ,  Jaehyuck CHOI ,  Jeongsu Yang ,  Donghoon CHUNG ,  Han-Shin LEE ,  Myungjun KIM ,  Ikjun KIM ,  Jikang KIM ,  Jeonghwan MIN ,  Kyoungchae SEO

IPC: C09J133/10 ,  G03F1/82 ,  B08B1/00 ,  C09J133/06 ,  B08B3/08 ,  B08B3/12 ,  G03F1/64 ,  C09J133/08

CPC classification number: C09J133/10 ,  C08F6/02 ,  C08F8/44 ,  C08F220/06 ,  C09J133/02 ,  C09J133/068 ,  C09J133/08 ,  C09J133/26 ,  G03F1/64 ,  G03F1/82

Abstract: A pellicle including a water-soluble adhesive and a photomask assembly including the pellicle are provided. A pellicle may include a membrane, a pellicle frame, and a water-soluble adhesive disposed on the pellicle frame. The water-soluble adhesive may be prepared by a mixture including a water-soluble acrylic adhesive material in an amount of about 40% to about 55% by weight of the mixture, water or a solution of water and alcohol in an amount of about 40% to about 55% by weight of the mixture, and an additive in an amount of about 1% to about 5% by weight of the mixture.

公开(公告)号：US20150037544A1

公开(公告)日：2015-02-05

申请号：US14336643

申请日：2014-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Shin LEE ,  Jae-Hyuck CHOI ,  Soo-Wan KOH ,  Jin-Su KIM ,  Hyung-Ho KO

IPC: G03F1/52 ,  H05K3/00

CPC classification number: G03F1/52 ,  G03F1/24 ,  Y10T428/24802

Abstract: A reflective photomask blank, a reflective photomask and an integrated circuit device manufactured by using a reflective photomask, include a multi-layered reflection layer; a capping layer on the multi-layered reflection layer and including a first transition metal; a passivation film contacting at least a portion of the capping layer on a side opposite to the multi-layered reflection layer and including a second transition metal and a nitrogen (N) atom; and a light absorption pattern covering a portion of the capping layer.

Abstract translation: 反射光掩模坯料，反射光掩模和通过使用反射光掩模制造的集成电路器件包括多层反射层; 所述多层反射层上的覆盖层包括第一过渡金属; 钝化膜，与所述多层反射层相反的一侧与所述覆盖层的至少一部分接触，并且包括第二过渡金属和氮（N）原子; 以及覆盖覆盖层的一部分的光吸收图案。