公开(公告)号：US20140001606A1

公开(公告)日：2014-01-02

申请号：US14020021

申请日：2013-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-jin LIM ,  Hyung-Suk JUNG ,  Yun-Ki CHOI

IPC: H01L29/02

CPC classification number: H01L29/02 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/28194 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517

Abstract: Semiconductor devices and methods of forming the semiconductor device are provided, the semiconductor devices including a first dielectric layer on a substrate, and a second dielectric layer on the first dielectric layer. The first dielectric layer has a carbon concentration lower than the second dielectric layer.

Abstract translation: 提供半导体器件和形成半导体器件的方法，所述半导体器件包括在衬底上的第一介电层和第一介电层上的第二电介质层。 第一电介质层的碳浓度低于第二电介质层。

公开(公告)号：US20250157510A1

公开(公告)日：2025-05-15

申请号：US18669694

申请日：2024-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Ki CHOI ,  Jungsoo JEONG

IPC: G11C7/14 ,  G11C7/04 ,  G11C7/10

Abstract: An operating method of a storage device includes a storage controller and a non-volatile memory device. The method includes providing, by the storage controller, the non-volatile memory device with a first command indicating a temperature read operation, providing, by a temperature sensor of the non-volatile memory device, a first measurement temperature value to the storage controller based on the first command, determining, by the storage controller, whether the first measurement temperature value is lower than a first threshold value, providing, by the storage controller, the non-volatile memory device with a second command indicating a dummy read operation in response to determining that the first measurement temperature value is smaller than the first threshold value, and performing, by the non-volatile memory device, the dummy read operation for heating based on the second command.