公开(公告)号：US20190164731A1

公开(公告)日：2019-05-30

申请号：US16262024

申请日：2019-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov VLADIMIR ,  Ki Ho HWANG ,  Doug Yong SUNG ,  Se Jin OH ,  Kul INN ,  Sung Ho JANG ,  Yun Kwang JEON

IPC: H01J37/32 ,  H04N5/225

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

公开(公告)号：US20170213710A1

公开(公告)日：2017-07-27

申请号：US15260910

申请日：2016-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Protopopov VLADIMIR ,  Ki Ho HWANG ,  Doug Yong SUNG ,  Se Jin OH ,  Kul INN ,  Sung Ho JANG ,  Yun Kwang JEON

IPC: H01J37/32 ,  H04N5/335 ,  G06T7/00

CPC classification number: H01J37/32935 ,  H01J37/32715 ,  H01J37/32972 ,  H04N5/2252

Abstract: An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

公开(公告)号：US20140224426A1

公开(公告)日：2014-08-14

申请号：US14168258

申请日：2014-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Kyung Hyun HAN ,  Yun Kwang JEON

IPC: H01L21/02

CPC classification number: H01L21/68735 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32642

Abstract: A substrate support unit of an etching process chamber includes a substrate support portion configured to support a substrate, a cathode under the substrate support portion, the cathode including an upper surface portion under the substrate support portion, the upper surface portion being smaller than a size of the substrate, and a step portion positioned a step downward from an edge portion of the upper surface portion, and a focus ring at an edge portion of the substrate, the focus ring being on the step portion and encompassing a side wall of the step portion and an edge portion of the substrate, the focus ring being configured to make a uniform distribution of an electric field on the substrate.

Abstract translation: 蚀刻处理室的基板支撑单元包括被配置为支撑基板的基板支撑部分，在基板支撑部分下方的阴极，阴极包括在基板支撑部分下方的上表面部分，上表面部分小于尺寸 以及从所述上表面部分的边缘部分向下定位的台阶部分和在所述基板的边缘部分处的聚焦环，所述聚焦环位于所述台阶部分上并且包围所述台阶部分的侧壁 部分和边缘部分，所述聚焦环被配置为使得基底上的电场均匀分布。