公开(公告)号：US20220181273A1

公开(公告)日：2022-06-09

申请号：US17367082

申请日：2021-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujin Kwon ,  Seokcheon Baek ,  Younghwan Son

IPC: H01L23/00 ,  H01L23/528 ,  H01L25/18

Abstract: A semiconductor device includes first and second gate electrodes stacked and spaced apart from each other in a first direction on a first region of a substrate, and extending in staircase form in a second direction on a second region of the substrate, the second gate electrodes disposed on the first gate electrodes; a first support structure penetrating the first gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level lower than a level of a lowermost second gate electrode among the second gate electrodes; a second support structure penetrating at least one of the first and second gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level higher than a level of un uppermost second gate electrode among the second gate electrodes.

公开(公告)号：US20230301101A1

公开(公告)日：2023-09-21

申请号：US18046139

申请日：2022-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan Lee ,  Yujin Kwon ,  Jaehong Yoo ,  Hyunmin Cho

IPC: H01L27/11582 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  H01L27/11556

Abstract: An integrated circuit memory device includes a stack structure on a semiconductor substrate. The stack structure includes a first gate stack group, which includes a plurality of spaced-apart first gate electrodes, and a second gate stack group, which includes a plurality of spaced-apart second gate electrodes. The second gate stack group extends on the first gate stack group so that the first gate stack group extends between the second gate stack group and the substrate. A plurality of active channel structures are provided, which penetrate vertically through the second gate stack group as upper channel structures and through the first gate stack group as lower channel structures. A plurality of dummy channel structures are provided, which penetrate vertically through the second gate stack group but not through the first gate stack group.

公开(公告)号：US11756900B2

公开(公告)日：2023-09-12

申请号：US17367082

申请日：2021-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujin Kwon ,  Seokcheon Baek ,  Younghwan Son

IPC: H01L23/00 ,  H01L23/528 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L23/562 ,  H01L23/528 ,  H01L24/08 ,  H01L25/18 ,  H01L2224/08146 ,  H10B41/27 ,  H10B43/27

Abstract: A semiconductor device includes first and second gate electrodes stacked and spaced apart from each other in a first direction on a first region of a substrate, and extending in staircase form in a second direction on a second region of the substrate, the second gate electrodes disposed on the first gate electrodes; a first support structure penetrating the first gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level lower than a level of a lowermost second gate electrode among the second gate electrodes; a second support structure penetrating at least one of the first and second gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level higher than a level of un uppermost second gate electrode among the second gate electrodes.

公开(公告)号：US12027473B2

公开(公告)日：2024-07-02

申请号：US18227908

申请日：2023-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujin Kwon ,  Seokcheon Baek ,  Younghwan Son

IPC: H01L23/00 ,  H01L23/528 ,  H01L25/18 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L23/562 ,  H01L23/528 ,  H01L24/08 ,  H01L25/18 ,  H01L2224/08146 ,  H10B41/27 ,  H10B43/27

Abstract: A semiconductor device includes first and second gate electrodes stacked and spaced apart from each other in a first direction on a first region of a substrate, and extending in staircase form in a second direction on a second region of the substrate, the second gate electrodes disposed on the first gate electrodes; a first support structure penetrating the first gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level lower than a level of a lowermost second gate electrode among the second gate electrodes; a second support structure penetrating at least one of the first and second gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level higher than a level of un uppermost second gate electrode among the second gate electrodes.

公开(公告)号：US20230378095A1

公开(公告)日：2023-11-23

申请号：US18227908

申请日：2023-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujin Kwon ,  Seokcheon Baek ,  Younghwan Son

IPC: H01L23/00 ,  H01L23/528 ,  H01L25/18

CPC classification number: H01L23/562 ,  H01L23/528 ,  H01L24/08 ,  H01L25/18 ,  H01L2224/08146 ,  H10B41/27

Abstract: A semiconductor device includes first and second gate electrodes stacked and spaced apart from each other in a first direction on a first region of a substrate, and extending in staircase form in a second direction on a second region of the substrate, the second gate electrodes disposed on the first gate electrodes; a first support structure penetrating the first gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level lower than a level of a lowermost second gate electrode among the second gate electrodes; a second support structure penetrating at least one of the first and second gate electrodes on the second region, extending in the first direction, and having an upper end disposed at a level higher than a level of un uppermost second gate electrode among the second gate electrodes.