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公开(公告)号：US09076511B2
公开(公告)日：2015-07-07
申请号：US14087444
申请日：2013-11-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehyun Kim , Youngcho Kim , Youngsun Min , Sungwhan Seo
Abstract: A nonvolatile memory device includes a memory cell array; and a high voltage generator arranged to generate a high voltage to be supplied to the memory cell array. The high voltage generator includes a pump unit block having a plurality of pump units supplied with an external voltage and at least one of the pumps is engaged in pumping the external voltage to a higher, output, voltage, at a steady clock rate. The number of pumps engaged in pumping is increased until a predetermined period has elapsed. The rate at which the number of pumps is increased depends upon the value of the external voltage.
Abstract translation: 非易失性存储器件包括存储单元阵列; 以及高电压发生器，其布置成产生要提供给存储单元阵列的高电压。 高压发生器包括具有供给外部电压的多个泵单元的泵单元块，并且至少一个泵接合以以稳定的时钟速率将外部电压泵送到更高的输出电压。 泵送的泵的数量增加直到经过了预定时间。 泵数量增加的速率取决于外部电压的值。
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公开(公告)号：US20140233337A1
公开(公告)日：2014-08-21
申请号：US14087444
申请日：2013-11-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taehyun Kim , Youngcho Kim , Youngsun Min , Sungwhan Seo
IPC: G11C5/14
Abstract: A nonvolatile memory device includes a memory cell array; and a high voltage generator arranged to generate a high voltage to be supplied to the memory cell array. The high voltage generator includes a pump unit block having a plurality of pump units supplied with an external voltage and at least one of the pumps is engaged in pumping the external voltage to a higher, output, voltage, at a steady clock rate. The number of pumps engaged in pumping is increased until a predetermined period has elapsed. The rate at which the number of pumps is increased depends upon the value of the external voltage.
Abstract translation: 非易失性存储器件包括存储单元阵列; 以及高电压发生器，其布置成产生要提供给存储单元阵列的高电压。 高压发生器包括具有供给外部电压的多个泵单元的泵单元块，并且至少一个泵接合以以稳定的时钟速率将外部电压泵送到更高的输出电压。 泵送的泵的数量增加直到经过了预定时间。 泵数量增加的速率取决于外部电压的值。
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