公开(公告)号：US20180366554A1

公开(公告)日：2018-12-20

申请号：US15871055

申请日：2018-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Yeoung CHOI ,  Jun Kyu YANG ,  Young Jin NOH ,  Jae Young AHN ,  Jae Hyun YANG ,  Dong Chul YOO ,  Jae Ho CHOI

IPC: H01L29/51 ,  H01L27/11582 ,  H01L27/11565

CPC classification number: H01L29/513 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: A plurality of gate electrodes is stacked on an upper surface of a substrate in a direction perpendicular to an upper surface of the substrate. A channel region penetrates through the plurality of gate electrodes to extend perpendicularly to the upper surface of the substrate. A gate dielectric layer includes a tunneling layer, a charge storage layer and a blocking layer that are sequentially disposed between the channel region and the plurality of gate electrodes. The charge storage layer includes a plurality of doping elements and a plurality of deep level traps generated by the plurality of doping element. A concentration distribution of the plurality of doping elements in a thickness direction of the charge storage layer is non-uniform.

公开(公告)号：US20180182647A1

公开(公告)日：2018-06-28

申请号：US15672623

申请日：2017-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Jin NOH ,  Kyung Sun KIM ,  Seung Bo SHIM ,  Yong Woo LEE ,  Ji Soo IM ,  Won Young CHOI

IPC: H01L21/67 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32642 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68735

Abstract: A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.