公开(公告)号：US20230420535A1

公开(公告)日：2023-12-28

申请号：US18195074

申请日：2023-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kanghun Moon ,  Kyungho Kim ,  Kihwan Kim ,  Choeun Lee ,  Yonguk Jeon

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L29/06 ,  H01L29/775

CPC classification number: H01L29/42392 ,  H01L29/66545 ,  H01L29/41775 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/775

Abstract: A semiconductor device includes: an active region on a substrate extending in a first direction; a plurality of semiconductor layers spaced apart from each in a vertical direction on the active region, the plurality of semiconductor layers including lower and upper semiconductor layers; a gate structure on the substrate extending in a second direction to intersect the active region and the plurality of semiconductor layers; and a source/drain region on the active region and contacting the plurality of semiconductor layers. The source/drain region includes first epitaxial layers, including first layers on a side surface of the lower semiconductor layer and a second layer provided on and contacting the active region, and a second epitaxial layer contacts a side surface of the upper semiconductor layer in the first direction, and the first layer is between the second epitaxial layer and the side surface of the lower semiconductor layer.