公开(公告)号：US20240079073A1

公开(公告)日：2024-03-07

申请号：US18320318

申请日：2023-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： YongSung Kil ,  Soonyoung Kang ,  Hong Rak Son ,  Kangseok Lee

IPC: G11C29/02 ,  G11C11/408 ,  G11C29/52

CPC classification number: G11C29/021 ,  G11C11/4087 ,  G11C29/52

Abstract: Disclosed is a method of operating a storage controller which is configured to communicate with a non-volatile memory device. The method includes receiving count data from the non-volatile memory device, determining a pre-read voltage based on the count data, sending a pre-read request using the pre-read voltage to the non-volatile memory device, receiving pre-read data from the non-volatile memory device responsive to sending the pre-read request, calculating a decoding value corresponding to the pre-read data, and generating read voltage information based on the count data and the decoding value, and the decoding value predicts an error voltage of the pre-read data.

公开(公告)号：US12250004B2

公开(公告)日：2025-03-11

申请号：US18318874

申请日：2023-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： YongSung Kil ,  Soonyoung Kang ,  Hong Rak Son ,  Kangseok Lee

IPC: H03M13/11 ,  G06F11/10

Abstract: Disclosed is a storage device which includes a nonvolatile memory device, and a memory controller that performs a read operation on the nonvolatile memory device and performs an error correction operation on data read in the read operation. In the error correction operation, the memory controller estimates an error rate of the read data, and determines whether to perform a read retry operation based on the estimated error rate.