公开(公告)号：US20190123262A1

公开(公告)日：2019-04-25

申请号：US15993862

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-myoung Lee ,  Jae-hoon Kim ,  Yong-sung Park ,  Se-chung Oh ,  Jun-ho Jeong

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: Provided is a semiconductor manufacturing apparatus including a transfer chamber, a first process chamber connected to the transfer chamber, and a second process chamber connected to the transfer chamber. The transfer chamber may be configured to transfer a substrate. The first process chamber may be configured to perform a first oxidation process for oxidizing a metal layer on the substrate at a first temperature. The second process chamber may be configured to perform a second oxidation process for oxidizing a metal layer on the substrate at a second temperature higher than the first temperature.

公开(公告)号：US10249817B2

公开(公告)日：2019-04-02

申请号：US15678098

申请日：2017-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-woong Kim ,  Kee-won Kim ,  Se-chung Oh ,  Yong-sung Park ,  Ju-hyun Kim

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

Abstract: A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.