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1.发明授权Method of detecting focus shift in lithography process, method of analyzing error of transferred pattern using the same and method of manufacturing semiconductor device using the methods 有权在光刻工艺中检测焦点偏移的方法，使用该方法分析转印图案的误差的方法以及使用该方法制造半导体器件的方法公开(公告)号：US09570364B2
公开(公告)日：2017-02-14
申请号：US14675683
申请日：2015-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong-Jin Chun , Suk-Joo Lee , Byoung-Il Choi
CPC classification number: H01L22/12 , G03F7/706 , G03F7/70641
Abstract: A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.
Abstract translation: 提供了一种在光刻工艺中检测焦点偏移的方法，使用该方法分析转印图案的误差的方法，以及使用该方法制造半导体器件的方法。 光刻处理的聚焦偏移检测方法包括在第一焦点和第二焦点之间产生掩模图案的第一轮廓带，在第一焦点和第三焦点之间产生掩模图案的第二轮廓，并且确定是否聚焦移位 使用第一轮廓带和第二轮廓带的交点发生掩模图案。
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公开(公告)号：US09606452B2
公开(公告)日：2017-03-28
申请号：US14705736
申请日：2015-05-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byung-Je Jung , Yong-Jin Chun , Byoung-Il Choi
CPC classification number: G03F7/70558 , G01B11/24 , G03F7/70625 , G03F7/70641
Abstract: A lithography metrology method is provided. Focus sensitivity data and dose sensitivity data of sample patterns to be formed on a substrate are acquired. At least one focus pattern selected in descending order of focus sensitivity from among the acquired focus sensitivity data of the sample patterns is determined. At least one low-sensitivity focus pattern in ascending order of the focus sensitivity from among the acquired dose sensitivity data of the sample patterns is selected, and at least one dose pattern selected in descending order of dose sensitivity from among the at least one low-sensitivity focus pattern is determined. A split substrate having a plurality of chip regions is prepared. A plurality of focus split patterns having a shape corresponding to the at least one focus pattern and a plurality of dose split patterns having a shape corresponding to the at least one dose pattern in the plurality of chip regions are formed. A best focus and a best dose from the plurality of focus split patterns and the plurality of dose split patterns are determined.
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