公开(公告)号：US20170278710A1

公开(公告)日：2017-09-28

申请号：US15411298

申请日：2017-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Seung Moon ,  Byung Gook Kim ,  Jae Hyuck Choi ,  Sung Won Kwon

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  B23K26/126 ,  B23K26/362 ,  B29C59/14 ,  B29C59/16 ,  B29C2791/009 ,  G03F1/80 ,  G03F7/0041 ,  H01L21/02675 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/304 ,  H01L21/30621 ,  H01L21/31138

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

公开(公告)号：US10217635B2

公开(公告)日：2019-02-26

申请号：US15411298

申请日：2017-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Seung Moon ,  Byung Gook Kim ,  Jae Hyuck Choi ,  Sung Won Kwon

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  G03F1/80 ,  B23K26/12 ,  B23K26/362 ,  B29C59/14 ,  H01L21/304 ,  H01L21/02 ,  H01L21/306 ,  B29C59/16 ,  G03F7/004

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.