公开(公告)号：US20180130672A1

公开(公告)日：2018-05-10

申请号：US15722413

申请日：2017-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Jung Kim ,  Ye Hwan Kim ,  Ki Hoon Jang ,  Byoung Ho Kwon ,  Bo Un Yoon

IPC: H01L21/321

CPC classification number: H01L21/32125 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/762 ,  H01L21/76224

Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.

公开(公告)号：US10741409B2

公开(公告)日：2020-08-11

申请号：US15722413

申请日：2017-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Jung Kim ,  Ye Hwan Kim ,  Ki Hoon Jang ,  Byoung Ho Kwon ,  Bo Un Yoon

IPC: H01L21/321 ,  H01L21/762 ,  H01L21/02 ,  H01L21/3105

Abstract: A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.