公开(公告)号：US20210280774A1

公开(公告)日：2021-09-09

申请号：US17330969

申请日：2021-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil Ho LEE ,  Woo Jin KIM ,  Gwan Hyeob KOH

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  G11C11/18

Abstract: A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

公开(公告)号：US20180032350A1

公开(公告)日：2018-02-01

申请号：US15663151

申请日：2017-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Kwang LEE ,  One Gun LEE ,  Woo Jin KIM ,  Dong Rak SHIN

IPC: G06F9/44

Abstract: An electronic device is provided that includes a connector configured to connect to an external electronic device that includes a recognition pin for sensing the connection, a connection configuration module configured to control an operation of the connector by using the recognition pin, and a processor configured to control the connector and the connection configuration module, wherein the processor is configured to, if the external electronic device is connected to the connector, verify through the recognition pin whether communication of a power delivery (PD) message is possible, and perform at least one of switching of a role associated with power supply of the electronic device or switching of a role associated with data transfer thereof by using at least one of a way to convey the PD message or a way to change a resistor connected to the recognition pin, depending on whether communication of the PD message is possible.

公开(公告)号：US20200227626A1

公开(公告)日：2020-07-16

申请号：US16506391

申请日：2019-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil Ho Lee ,  Woo Jin KIM ,  Gwan Hyeob KOH

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

Abstract: A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.