公开(公告)号：US11309054B2

公开(公告)日：2022-04-19

申请号：US16823720

申请日：2020-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonyeoung Jung ,  Hyunglae Eun ,  Dong Kim ,  Inhoon Park

IPC: G11C29/44 ,  G11C11/406 ,  G11C11/408 ,  G11C29/42

Abstract: A test operation condition of a volatile memory device is set such that an error probability is increased based on the test operation condition, compared to a normal operation condition for a normal operation of the volatile memory device. A test mode is set with respect to a test object region corresponding to at least a portion of a memory cell array included in the volatile memory device. A test operation of the volatile memory device is performed based on the test operation condition during the test mode to detect error position information of errors in data stored in the test object region. A runtime repair operation is performed with respect to the volatile memory device based on the error position information.

公开(公告)号：US11231992B2

公开(公告)日：2022-01-25

申请号：US16793381

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhoon Park ,  Dong Kim ,  Hyunglae Eun ,  Chulseung Lim ,  Wonyeoung Jung

IPC: G06F11/10 ,  G06F11/14 ,  G06F11/07 ,  G11C11/408 ,  G11C29/42 ,  G11C29/00

Abstract: A memory system includes a plurality of memory devices, each of the plurality of memory devices including a plurality of memory cells, and at least one of the plurality of memory devices including a backup region, and a memory controller configured to store data to be stored in a plurality of selected memory cells in the plurality of selected memory cells and the backup region, the plurality of selected memory cells being connected to a selected word line of a selected memory device among the plurality of memory devices, and replace the selected word line with a redundancy word line to which a plurality of redundancy memory cells among the plurality of memory cells are connected in response to a correctable error correction code (CECC) occurring in at least one of the plurality of selected memory cells.

公开(公告)号：US20210026732A1

公开(公告)日：2021-01-28

申请号：US16793381

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhoon PARK ,  Dong Kim ,  Hyunglae Eun ,  Chulseung Lim ,  Wonyeoung Jung

IPC: G06F11/10 ,  G06F11/14 ,  G06F11/07 ,  G11C11/408 ,  G11C29/42 ,  G11C29/00

Abstract: A memory system includes a plurality of memory devices, each of the plurality of memory devices including a plurality of memory cells, and at least one of the plurality of memory devices including a backup region, and a memory controller configured to store data to be stored in a plurality of selected memory cells in the plurality of selected memory cells and the backup region, the plurality of selected memory cells being connected to a selected word line of a selected memory device among the plurality of memory devices, and replace the selected word line with a redundancy word line to which a plurality of redundancy memory cells among the plurality of memory cells are connected in response to a correctable error correction code (CECC) occurring in at least one of the plurality of selected memory cells.