公开(公告)号：US11231992B2

公开(公告)日：2022-01-25

申请号：US16793381

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhoon Park ,  Dong Kim ,  Hyunglae Eun ,  Chulseung Lim ,  Wonyeoung Jung

IPC: G06F11/10 ,  G06F11/14 ,  G06F11/07 ,  G11C11/408 ,  G11C29/42 ,  G11C29/00

Abstract: A memory system includes a plurality of memory devices, each of the plurality of memory devices including a plurality of memory cells, and at least one of the plurality of memory devices including a backup region, and a memory controller configured to store data to be stored in a plurality of selected memory cells in the plurality of selected memory cells and the backup region, the plurality of selected memory cells being connected to a selected word line of a selected memory device among the plurality of memory devices, and replace the selected word line with a redundancy word line to which a plurality of redundancy memory cells among the plurality of memory cells are connected in response to a correctable error correction code (CECC) occurring in at least one of the plurality of selected memory cells.

公开(公告)号：US20210026732A1

公开(公告)日：2021-01-28

申请号：US16793381

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhoon PARK ,  Dong Kim ,  Hyunglae Eun ,  Chulseung Lim ,  Wonyeoung Jung

IPC: G06F11/10 ,  G06F11/14 ,  G06F11/07 ,  G11C11/408 ,  G11C29/42 ,  G11C29/00

Abstract: A memory system includes a plurality of memory devices, each of the plurality of memory devices including a plurality of memory cells, and at least one of the plurality of memory devices including a backup region, and a memory controller configured to store data to be stored in a plurality of selected memory cells in the plurality of selected memory cells and the backup region, the plurality of selected memory cells being connected to a selected word line of a selected memory device among the plurality of memory devices, and replace the selected word line with a redundancy word line to which a plurality of redundancy memory cells among the plurality of memory cells are connected in response to a correctable error correction code (CECC) occurring in at least one of the plurality of selected memory cells.