公开(公告)号：US20140231886A1

公开(公告)日：2014-08-21

申请号：US14079123

申请日：2013-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tian-zi SHEN ,  Won-jong YOO ,  Huamin LI ,  Min-Sup CHOI ,  Jae-young CHOI

IPC: H01L31/113 ,  H01L31/0224

CPC classification number: H01L31/1136 ,  H01L31/022408

Abstract: A flexible photosensor includes a flexible substrate, a gate on the flexible substrate, the gate including a conductive material having a planar structure, a gate insulating layer on the flexible substrate and the gate to at least cover the gate, the gate insulating layer including a non-conductive material having a planar structure, and a channel layer on the gate insulating layer, the channel layer including a semiconductor material having a planar structure.

Abstract translation: 柔性光电传感器包括柔性基板，柔性基板上的栅极，栅极包括具有平面结构的导电材料，柔性基板上的栅极绝缘层和至少覆盖栅极的栅极，栅极绝缘层包括 具有平面结构的非导电材料和栅极绝缘层上的沟道层，所述沟道层包括具有平面结构的半导体材料。

公开(公告)号：US20150014630A1

公开(公告)日：2015-01-15

申请号：US14188862

申请日：2014-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-hee CHOI ,  Won-jong YOO ,  Seung-hwan LEE ,  Min-sup CHOI ,  Xiao Chi LIU ,  Ji-a LEE

IPC: H01L29/775 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1606 ,  H01L29/6603 ,  H01L29/7311 ,  H01L29/7376 ,  H01L29/88

Abstract: A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.

Abstract translation: 隧道装置可以包括隧道势垒层，在隧道势垒层的第一表面上包括第一导电类型二维材料的第一材料层和在第二表面上包括第二导电类型二维材料的第二材料层 的隧道势垒层。 隧穿装置可以使用通过第一材料层和第二材料层之间的隧道势垒层的隧穿电流。

公开(公告)号：US20140048411A1

公开(公告)日：2014-02-20

申请号：US13864732

申请日：2013-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-young CHOI ,  Won-jong YOO ,  Seung-hwan LEE ,  Yeong-dae LIM

IPC: C01B31/04

CPC classification number: C01B31/0484 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  C23C16/56 ,  H01J37/321 ,  H01J37/32146 ,  Y10S977/845

Abstract: A method and apparatus for restoring properties of graphene includes exposing the graphene to plasma having a density in a range from about 0.3*108 cm−3 to about 30*108 cm−3 when the graphene is in a ground state. The method and apparatus may be used for large-area, low-temperature, high-speed, eco-friendly, and silicon treatment of graphene.

Abstract translation: 用于恢复石墨烯性质的方法和装置包括当石墨烯处于基态时，将石墨烯暴露于具有约0.3×10 8 cm -3至约30×10 8 cm -3的范围内的密度的等离子体。 该方法和装置可用于石墨烯的大面积，低温，高速，环保和硅处理。