公开(公告)号：US20140048411A1

公开(公告)日：2014-02-20

申请号：US13864732

申请日：2013-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-young CHOI ,  Won-jong YOO ,  Seung-hwan LEE ,  Yeong-dae LIM

IPC: C01B31/04

CPC classification number: C01B31/0484 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  C23C16/56 ,  H01J37/321 ,  H01J37/32146 ,  Y10S977/845

Abstract: A method and apparatus for restoring properties of graphene includes exposing the graphene to plasma having a density in a range from about 0.3*108 cm−3 to about 30*108 cm−3 when the graphene is in a ground state. The method and apparatus may be used for large-area, low-temperature, high-speed, eco-friendly, and silicon treatment of graphene.

Abstract translation: 用于恢复石墨烯性质的方法和装置包括当石墨烯处于基态时，将石墨烯暴露于具有约0.3×10 8 cm -3至约30×10 8 cm -3的范围内的密度的等离子体。 该方法和装置可用于石墨烯的大面积，低温，高速，环保和硅处理。