公开(公告)号：US20230116342A1

公开(公告)日：2023-04-13

申请号：US17829781

申请日：2022-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Hee Choi ,  Sung Uk Jang ,  Dong Suk Shin ,  Bong Jin Kuh ,  Kong Soo Lee

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L29/423 ,  H01L27/108

Abstract: A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction crossing the first direction and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer containing germanium.

公开(公告)号：US20250056789A1

公开(公告)日：2025-02-13

申请号：US18620333

申请日：2024-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Jin Nam ,  Sung-Hwan Jang ,  Won Hee Choi ,  Sung Uk Jang

IPC: H10B12/00

Abstract: The present disclosure relates to semiconductor memory devices. An example semiconductor memory device comprises a substrate, a structure including word lines and interlayer insulating films alternately stacked on the substrate, a channel region disposed between two adjacent word lines in a vertical direction, a first source/drain region disposed on a first side of the channel region, a second source/drain region disposed on a second side of the channel region, a bit line which extends in the vertical direction on the substrate and is connected to the first source/drain region, a capping insulating film disposed between the bit line and the word lines, and a data storage connected to the second source/drain region. At least a part of the first source/drain region protrudes from a sidewall of the capping insulating film toward the bit line.