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公开(公告)号:US20250149467A1
公开(公告)日:2025-05-08
申请号:US18917246
申请日:2024-10-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Juil Choi , Jongho Park , Chanwook Park , Hyungjun Park , Taeoh Ha , Hongseo Heo
IPC: H01L23/00 , H01L23/16 , H01L23/538 , H01L25/00 , H01L25/065 , H01L25/18 , H10B80/00
Abstract: A semiconductor package includes a first die structure including a support substrate having a cavity, a first semiconductor chip in the cavity, and a first gap filling layer that fills a gap between an inner wall of the cavity and the first semiconductor chip; and a second die structure on the first die structure, the second die structure including a second semiconductor chip and a second gap filling layer surrounding an outer side surface of the second semiconductor chip. The first semiconductor chip includes a first backside insulating layer with second bonding pads. The second semiconductor chip includes a second front insulating layer with third bonding pads. The second bonding pads and the third bonding pads are directly bonded to each other.
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公开(公告)号:US20250062213A1
公开(公告)日:2025-02-20
申请号:US18731988
申请日:2024-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gyuho Kang , Hyungjun Park , Kwangok Jeong , Juil Choi , Taeoh Ha , Hongseo Heo
IPC: H01L23/498 , H01L21/48 , H01L23/00
Abstract: A semiconductor package includes a lower redistribution wiring layer that includes first redistribution wirings, a protective layer that defines openings, and bonding pads that are on the protective layer and are electrically connected to the first redistribution wirings through the openings; conductive bumps that are on first bonding pads of the bonding pads; and a semiconductor chip on the first bonding pads, where each of the bonding pads includes: a conductive pillar in a respective opening of the openings of the protective layer, where the conductive pillar includes a first diameter; and a pad pattern that is on the protective layer and an upper surface of the conductive pillar, where the pad pattern includes a second diameter that is greater than the first diameter.
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