公开(公告)号：US20210384213A1

公开(公告)日：2021-12-09

申请号：US17408819

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-kook PARK ,  Hong-soo KIM ,  Tae-keun CHO

IPC: H01L27/11556 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582

Abstract: A semiconductor memory device includes: a substrate including a cell region and a connection region; a first word line stack comprising a plurality of first word lines that extend to the connection region and are stacked on the cell region,; a second word line stack comprising a plurality of second word lines that extend to the connection region and are stacked on the cell region, the second word line being adjacent to the first word line stack; vertical channels in the cell region of the substrate, the vertical channels being connected to the substrate and coupled with the plurality of first and second word lines; a bridge region that connects the first word lines of the first word line stack with the second word lines of the second word line stack; and a local planarized region under the bridge region.

公开(公告)号：US20240284665A1

公开(公告)日：2024-08-22

申请号：US18640451

申请日：2024-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-kook PARK ,  Hong-soo KIM ,  Tae-keun CHO

IPC: H10B41/27 ,  H10B41/30 ,  H10B41/40 ,  H10B43/27 ,  H10B43/30 ,  H10B43/40

CPC classification number: H10B41/27 ,  H10B41/30 ,  H10B41/40 ,  H10B43/27 ,  H10B43/30 ,  H10B43/40

Abstract: A semiconductor memory device includes: a substrate including a cell region and a connection region; a first word line stack comprising a plurality of first word lines that extend to the connection region and are stacked on the cell region; a second word line stack comprising a plurality of second word lines that extend to the connection region and are stacked on the cell region, the second word line being adjacent to the first word line stack; vertical channels in the cell region of the substrate, the vertical channels being connected to the substrate and coupled with the plurality of first and second word lines; a bridge region that connects the first word lines of the first word line stack with the second word lines of the second word line stack; and a local planarized region under the bridge region.